Lin Xu

US Patent:

20230020387, Jan 19, 2023

Filed:

Nov 19, 2020

Appl. No.:

17/777656

Inventors:

- Fremont CA, US
Lin XU - Fremont CA, US
John DAUGHERTY - Fremont CA, US
John Michael KERNS - Livermore CA, US
Satish SRINIVASAN - Newark CA, US
Robin KOSHY - Fremont CA, US
Michael LOPEZ - Redwood City CA, US
Douglas DETERT - Berkeley CA, US

International Classification:

C23C 16/40
C23C 4/11
H01J 37/32
C23C 16/56
C23C 14/08
C23C 14/58

Abstract:

A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400 C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

US Patent:

20200234971, Jul 23, 2020

Filed:

Apr 6, 2020

Appl. No.:

16/840944

Inventors:

- Santa Clara CA, US
Lin Xu - Fremont CA, US
Anchuan Wang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/311

Abstract:

Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.

US Patent:

20190267248, Aug 29, 2019

Filed:

Feb 28, 2019

Appl. No.:

16/288311

Inventors:

- Santa Clara CA, US
Lin Xu - Fremont CA, US
Anchuan Wang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/311

Abstract:

Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing or nitrogen-containing material. The second layer of the spacer may be disposed between the first layer and third layer of the spacer. The methods may also include removing the oxygen-containing material.

US Patent:

20180350617, Dec 6, 2018

Filed:

May 31, 2017

Appl. No.:

15/609483

Inventors:

- Santa Clara CA, US
Lin Xu - Fremont CA, US
Anchuan Wang - San Jose CA, US
Nitin Ingle - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/311

Abstract:

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

US Patent:

20180350619, Dec 6, 2018

Filed:

Oct 24, 2017

Appl. No.:

15/792376

Inventors:

- Santa Clara CA, US
Lin Xu - Fremont CA, US
Anchuan Wang - San Jose CA, US
Nitin Ingle - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/311
H01L 21/67

Abstract:

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

US Patent:

20170229309, Aug 10, 2017

Filed:

Apr 12, 2016

Appl. No.:

15/096428

Inventors:

- Santa Clara CA, US
Lin XU - Fremont CA, US
Zhijun CHEN - San Jose CA, US
Anchuan WANG - San Jose CA, US

International Classification:

H01L 21/3065
H01L 21/67
H01J 37/32

Abstract:

A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.