Michael P Leary

US Patent:

6764926, Jul 20, 2004

Filed:

Mar 25, 2002

Appl. No.:

10/106472

Inventors:

Tetsuya Takeuchi - Sunnyvale CA
David P. Bour - Cupertino CA
Michael H. Leary - Fremont CA
Michael R. T. Tan - Menlo Park CA
Andy Luan - Palo Alto CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2100

US Classification:

438477, 438507, 438681

Abstract:

A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.

US Patent:

6765238, Jul 20, 2004

Filed:

Sep 12, 2002

Appl. No.:

10/243520

Inventors:

Yin-Lan Chang - Cupertino CA
Ashish Tandon - Sunnyvale CA
Michael H. Leary - Union City CA
Michael R. T. Tan - Menlo Park CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2988

US Classification:

257104, 257 13, 257 25, 257 79, 257103, 257183, 257918, 438 22, 438 24, 438 25, 438 28, 438 29, 438 46, 438 47

Abstract:

The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

US Patent:

6813295, Nov 2, 2004

Filed:

Mar 25, 2002

Appl. No.:

10/106678

Inventors:

Tetsuya Takeuchi - Sunnyval CA
David P. Bour - Cupertino CA
Michael H. Leary - Fremont CA
Michael R. T. Tan - Menlo Park CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01S 500

US Classification:

372 45, 372 96

Abstract:

Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.

US Patent:

6839370, Jan 4, 2005

Filed:

Dec 31, 2001

Appl. No.:

10/040167

Inventors:

Frank H. Peters - San Jose CA, US
Michael H. Leary - Fremont CA, US
Yoon-Kyu Song - San Jose CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01S 500

US Classification:

372 46, 372 45

Abstract:

An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

US Patent:

6847491, Jan 25, 2005

Filed:

Sep 27, 2000

Appl. No.:

09/672159

Inventors:

Benjamin Bin Jian - Fremont CA, US
Michael H. Leary - Union City CA, US

Assignee:

Arrayed Fiberoptics Corporation - Santa Clara CA

International Classification:

G02B 1100
G02B 2710
G02B 632
G02B 636

US Classification:

359642, 359619, 359620, 385 33, 385 34, 385 93

Abstract:

The disclosed hybrid microlens enables the economical production of large diameter, high numerical aperture refractive microlens by microfabrication. The hybrid microlens has a combination of a refractive microlens formed on a thin layer of high index material such as silicon and a spacer layer of a low index material such as fused silica. Advantages include substantially reduced lens sag, fast etching of the microlens, small wafer stack thickness, large diffraction angle in the low index spacer, large optical beam diameter, high optical performance, and low cost. Also disclosed is a design for substantially reduced optical return signal and small polarization dependent optical loss from an optical fiber which is perpendicular to and butt-coupled to a planar optical surface. This design is to form a small slanted surface on the planar optical surface in the vicinity of the optical fiber core and fill the space between the fiber and the slanted surface with an index-matching optical epoxy.

US Patent:

6878970, Apr 12, 2005

Filed:

Apr 17, 2003

Appl. No.:

10/418408

Inventors:

David P. Bour - Cupertino CA, US
Michael H. Leary - Mountain View CA, US
Yoon-Kyu Song - Warw ick RI, US
Michael R. T. Tan - Menlo Park CA, US
Tetsuya Takeuchi - Sunnyvale CA, US
Danielle Chamberlin - San Mateo CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L033/00
H01L029/06

US Classification:

257 94, 257 13, 257 15

Abstract:

Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

US Patent:

6947217, Sep 20, 2005

Filed:

Dec 14, 2001

Appl. No.:

10/022757

Inventors:

Scott W. Corzine - Sunnyvale CA, US
Michael Renne Ty Tan - Menlo Park CA, US
Chao Kun Lin - Fremont CA, US
Jintian Zhu - Palo Alto CA, US
Michael H. Leary - Fremont CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

G02B001/10

US Classification:

359584, 359359, 359585

Abstract:

A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

US Patent:

7016392, Mar 21, 2006

Filed:

Apr 30, 2003

Appl. No.:

10/427585

Inventors:

Ashish Tandon - Palo Alto CA, US
Michael H. Leary - Palo Alto CA, US

International Classification:

H01S 3/08

US Classification:

372 96, 372 92, 372 99, 372 4301, 372 46011, 372 50124

Abstract:

The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.