Minh Thanh Le

US Patent:

20110003309, Jan 6, 2011

Filed:

Mar 19, 2009

Appl. No.:

12/922463

Inventors:

Jill Detmer - Kensington CA, US
Xiaoqiao Jiang - Concord CA, US
Minh Le - El Cerrito CA, US
David Sherman - Davis CA, US

Assignee:

SIEMENS HEALTHCARE DIAGNOSTICS INC. - Tarrytown NY

International Classification:

C12Q 1/68
C07H 21/02
C07H 21/04
C12P 19/34

US Classification:

435 6, 536 231, 435 915

Abstract:

Provided are non-competitive internal controls for use in nucleic acid tests (NATs), which are obtained from the organisms (MET) and (Corn). The non-competitive internal controls have utility in DNA and RNA NATs selected from Influenza A, Influenza B, parainfluenza viruses 1 to 4 (PIV-1 to PIV-4), respiratory syncytial virus type A (RSV A), RSV B, human metapneumovirus (hMPV), (CT), and (GC), Hepatitis B virus (HBV), Hepatitis C virus (HCV), Human Immunodeficiency Virus I (HIV-1), and Severe Acute Respiratory Syndrome (SARS).

US Patent:

20150279670, Oct 1, 2015

Filed:

Nov 20, 2014

Appl. No.:

14/549158

Inventors:

- San Jose CA, US
Stuart Brinkley - Sunnyvale CA, US
Anh Duong - Fremont CA, US
Majid Gharghi - San Jose CA, US
Sang Lee - San Jose CA, US
Minh Huu Le - San Jose CA, US
Karl Littau - Palo Alto CA, US
Jingang Su - Cupertino CA, US

International Classification:

H01L 21/02
H01L 29/786

Abstract:

A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

US Patent:

20150093500, Apr 2, 2015

Filed:

Dec 20, 2013

Appl. No.:

14/136125

Inventors:

- San Jose CA, US
Jianhua Hu - Palo Alto CA, US
Minh Huu Le - San Jose CA, US

Assignee:

Intermolecular, Inc. - San Jose CA

International Classification:

H01B 13/00

US Classification:

427124, 427125

Abstract:

The electrical and optical performance of silver LED reflective contacts in III-V devices such as GaN LEDs is limited by silver's tendency to agglomerate during annealing processes and to corrode on contact with silver-reactive materials elsewhere in the device (for example, gallium or aluminum). Agglomeration and reaction are prevented, and crystalline morphology of the silver layer may be optimized, by forming a diffusion-resistant transparent conductive layer between the silver and the source of silver-reacting metal, (2) doping the silver or the diffusion-resistant transparent conductive layer for improved adhesion to adjacent layers, or (3) doping the silver with titanium, which in some embodiments prevents agglomeration and promotes crystallization of the silver in the preferred orientation.

US Patent:

20150060910, Mar 5, 2015

Filed:

Aug 29, 2013

Appl. No.:

14/014029

Inventors:

- San Jose CA, US
Jianhua Hu - Palo Alto CA, US
Minh Huu Le - San Jose CA, US

Assignee:

Intermolecular Inc. - San Jose CA

International Classification:

H01L 33/46
H01L 33/42

US Classification:

257 98, 438 29

Abstract:

Methods to improve the reflection of light emitting devices are disclosed. A method consistent with the present disclosure includes forming a light generating layer over a site-isolated region of a substrate. Next, forming a first transparent conductive layer over the light generating layer. Forming a low refractive index material over the first transparent conductive layer, and in time, forming a second transparent conductive layer over the low refractive index material. Subsequently, forming a reflective material layer thereon. Accordingly, methods consistent with the present disclosure may form a plurality of light emitting devices in various site-isolated regions on a substrate.

US Patent:

20140272290, Sep 18, 2014

Filed:

Mar 15, 2013

Appl. No.:

13/838170

Inventors:

- San Jose CA, US
Nikhil Kalyankar - Mountain View CA, US
Minh Huu Le - San Jose CA, US

Assignee:

INTERMOLECULAR INC. - San Jose CA

International Classification:

C09D 167/02
C09D 127/20
C09D 127/18

US Classification:

428141, 428339, 428421, 428521, 2041921

Abstract:

Embodiments provided herein describe anti-glare coatings and panels and methods for forming anti-glare coatings and panels. A transparent substrate is provided. A polymer is sputtered onto the transparent substrate to form an anti-glare coating on the transparent substrate.

US Patent:

20140273407, Sep 18, 2014

Filed:

Mar 14, 2014

Appl. No.:

14/211658

Inventors:

- Perrysburg OH, US
Scott Jewhurst - Redwood City CA, US
Minh Huu Le - San Jose CA, US
Haifan Liang - Fremont CA, US
Hao Lin - Santa Clara CA, US
Wei Liu - Sunnyvale CA, US
Minh Anh Nguyen - San Jose CA, US
Zhi Wen Sun - Sunnyvale CA, US
Gang Xiong - Santa Clara CA, US

Assignee:

FIRST SOLAR, INC. - Perrysburg OH

International Classification:

H01L 31/18

US Classification:

438476, 106 111, 510175

Abstract:

Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used.

US Patent:

20140170049, Jun 19, 2014

Filed:

Dec 14, 2012

Appl. No.:

13/715988

Inventors:

- San Jose CA, US
Mohd Fadzli Anwar Hassan - San Francisco CA, US
Minh Huu Le - San Jose CA, US
Yu Wang - San Jose CA, US

Assignee:

INTERMOLECULAR, INC. - San Jose CA

International Classification:

B05D 5/06
G02B 1/11

US Classification:

423278, 427162, 427 58

Abstract:

A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cmand 11 W/cmapplied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.

US Patent:

20140161989, Jun 12, 2014

Filed:

Dec 12, 2012

Appl. No.:

13/712048

Inventors:

- San Jose CA, US
Scott Jewhurst - Redwood City CA, US
Minh Huu Le - San Jose CA, US

Assignee:

INTERMOLECULAR, INC. - San Jose CA

International Classification:

B05D 5/06

US Classification:

427558, 427162, 977773

Abstract:

Methods for forming anti-glare coatings including forming a layer using a sol-gel process are described. The layer further includes at least one of porogens, nanoparticles, or photosensitive macromolecules. The porogens, nanoparticles, or photosensitive macromolecules are removed using a thermal treatment or UV treatment to impart porosity and surface roughness to the layer. Alternatively, the layer may be roughened using a mechanical process. The layer can optionally be subjected to a curing step. The curing step may be a thermal curing process or a chemical curing process.