Raymond Thanh Lu

US Patent:

20180337024, Nov 22, 2018

Filed:

May 16, 2018

Appl. No.:

15/981089

Inventors:

- Santa Clara CA, US
Dmitry Lubomirsky - Cupertino CA, US
Soonwook Jung - San Jose CA, US
Soonam Park - Sunnyvale CA, US
Raymond W. Lu - San Francisco CA, US
Phong Pham - San Jose CA, US
Edwin C. Suarez - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01J 37/32
H01L 21/3065
C23C 16/455

Abstract:

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

US Patent:

20160042920, Feb 11, 2016

Filed:

Aug 7, 2014

Appl. No.:

14/454493

Inventors:

- Santa Clara CA, US
Sang Won Kang - Cupertino CA, US
Dongqing Yang - San Jose CA, US
Raymond W. Lu - San Francisco CA, US
Peter Hillman - Santa Clara CA, US
Nicholas Celeste - Oakland CA, US
Tien Fak Tan - Campbell CA, US
Soonam Park - Sunnyvale CA, US
Dmitry Lubomirsky - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01J 37/32
H01J 9/24

Abstract:

A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.