Robert F Karlicek from 5892 Oakhill Dr, Santa Maria, CA 93455, age 72, Phone: 8059383169

Name / Title

Company / Classification

Phones & Addresses

Robert F. Karlicek
President, Principal

Soliduv, Inc
Mfg Misc Industry Machinery · Mfg Semiconductors/Related Devices

2 Eastern Rd, Acton, MA 01720

Robert Karlicek
Vice President Of Research And Development, Chief Scientist

LUMINUS DEVICES, INC
Mfg Lighting Equipment · Mfg Commercial Lighting Fixtures

175 New Boston St #T, Woburn, MA 01801
1100 Technology Park Dr, Billerica, MA 01821
1100 Tech Park Dr, Billerica, MA 01821
9785288000, 7819327831

Gan Led With Solderable Backside Metal
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US Patent:

6787435, Sep 7, 2004
Filed:

Jul 5, 2002
Appl. No.:

10/064359
Inventors:

Shawn R. Gibb - Charlotte NC
Robert F. Karlicek - Santa Maria CA
Prosanto K. Mukerji - Phoenix AZ
Hari S. Venugopalan - Somerset NJ
Ivan Eliashevich - Maplewood NJ
Assignee:

GELcore LLC - Valley View OH
International Classification:

H01L 2120
US Classification:

438507, 438 20, 438 22, 438 24, 438 46, 438 47, 438 48
Abstract:

A light-emitting element ( ) is disclosed. A light emitting diode (LED) includes a sapphire substrate ( ) having front and back sides ( ), and a plurality of semiconductor layers ( ) deposited on the front side ( ) of the sapphire substrate ( ). The semiconductor layers ( ) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack ( ) includes an adhesion layer ( ) deposited on the back side ( ) of the sapphire substrate ( ), and a solderable layer ( ) connected to the adhesion layer ( ) such that the solderable layer ( ) is secured to the sapphire substrate ( ) by the adhesion layer ( ). A support structure ( ) is provided on which the LED is disposed. A solder bond ( ) is arranged between the LED and the support structure ( ). The solder bond ( ) secures the LED to the support structure ( ).

Gan Led With Solderable Backside Metal
view source
US Patent:

7190005, Mar 13, 2007
Filed:

Jun 22, 2004
Appl. No.:

10/874104
Inventors:

Shawn R. Gibb - Charlotte NC, US
Robert F. Karlicek - Santa Maria CA, US
Prosanto K. Mukerji - Phoenix AZ, US
Hari S. Venugopalan - Somerset NJ, US
Ivan Eliashevich - Maplewood NJ, US
Assignee:

GELcore, LLC - Valley View OH
International Classification:

H01L 33/00
H01L 21/76
US Classification:

257103, 257762, 257E33062
Abstract:

A light-emitting element () is disclosed. A light emitting diode (LED) includes a sapphire substrate () having front and back sides (), and a plurality of semiconductor layers () deposited on the front side () of the sapphire substrate (). The semiconductor layers () define a light-emitting structure that emits light responsive to an electrical input. A metallization stack () includes an adhesion layer () deposited on the back side () of the sapphire substrate (), and a solderable layer () connected to the adhesion layer () such that the solderable layer () is secured to the sapphire substrate () by the adhesion layer (). A support structure () is provided on which the LED is disposed. A solder bond () is arranged between the LED and the support structure (). The solder bond () secures the LED to the support structure ().