Rolf Christ

US Patent:

61627356, Dec 19, 2000

Filed:

Mar 26, 1999

Appl. No.:

9/277673

Inventors:

Gunnar Zimmermann - Richmond VA
Rolf Christ - Richmond VA
Mark Johnston - Glenn Allen VA

Assignee:

Infineon Technologies North America Corp. - San Jose CA

International Classification:

H01L 2100

US Classification:

438712

Abstract:

In accordance with the present invention, a method for inspecting a semiconductor sample for failures includes the steps of determining a target area for observation on the semiconductor sample, preparing a region in proximity to the target area to provide access to the target area, and mounting the semiconductor sample into a chamber. The chamber provides a capability for removing material in proximity of the target area, and provides a capability for observing the semiconductor sample in-situ. The semiconductor sample is maintained in the chamber while performing the following steps: etching a first material selective to a second material such that the target area has the first material removed therefrom to expose the second material such that the second material is preserved for observation, and monitoring the progress of the etching step to determine a time to discontinue the etching.