Rong R Fan

US Patent:

6996147, Feb 7, 2006

Filed:

Mar 29, 2002

Appl. No.:

10/112698

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01S 5/00

US Classification:

372 43, 372 45, 438 22, 438 45

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

7211143, May 1, 2007

Filed:

Dec 8, 2003

Appl. No.:

10/731745

Inventors:

Peidong Yang - Berkeley CA, US
Rongrui He - Berkeley CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yi-Ying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C30B 23/00
C30B 25/00
C30B 28/12

US Classification:

117 84, 117 87, 117 88, 117106, 117920, 977734, 977742, 977762, 977855

Abstract:

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar “epitaxial-casting” approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors.

US Patent:

7303815, Dec 4, 2007

Filed:

Aug 15, 2003

Appl. No.:

10/642043

Inventors:

Peidong Yang - Berkeley CA, US
Matthew Law - Berkeley CA, US
Rongrui He - El Cerrito CA, US
Rong Fan - El Cerrito CA, US
Franklin Kim - Berkeley CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

B32B 15/04
G01K 5/68

US Classification:

428357, 428397, 428401, 428616, 117 87, 977755, 977810, 977811

Abstract:

A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO, ZnO, MgO, AlO, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO, transition metal doped TiO(e. g. , COTiO), BaTiO, ZnO, transition metal doped ZnO (e. g. , MnZnO and NiZnO), LaMnO, BaTiO, PbTiO, YBaCuO, or SrCuOand other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

US Patent:

7355216, Apr 8, 2008

Filed:

Apr 8, 2004

Appl. No.:

10/822148

Inventors:

Peidong Yang - Berkeley CA, US
Rongrui He - El Cerrito CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yiying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C30B 23/00

US Classification:

257200

Abstract:

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

US Patent:

7569847, Aug 4, 2009

Filed:

Jan 20, 2005

Appl. No.:

11/040664

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 23/29

US Classification:

257 14, 257 12, 257 19, 257200, 257616, 257653, 257 93, 257E29003, 257E2907, 977762, 977763, 977764, 977765

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

7569941, Aug 4, 2009

Filed:

Dec 22, 2006

Appl. No.:

11/645241

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 29/201

US Classification:

257798, 257 12, 257 14, 257183, 257616, 257E2907, 257E29245, 977762, 977763, 977765

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

7834264, Nov 16, 2010

Filed:

Dec 22, 2006

Appl. No.:

11/645236

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 35/00
H01L 35/02
H01L 35/12

US Classification:

136230, 136203, 136205, 1362361

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

7898005, Mar 1, 2011

Filed:

Dec 15, 2008

Appl. No.:

12/335430

Inventors:

Peidong Yang - Kensington CA, US
Arunava Majumdar - Orinda CA, US
Rong Fan - Pasadena CA, US
Rohit Karnik - Cambridge MA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

G01N 27/447

US Classification:

257200, 257E21108

Abstract:

Nanofluidic devices incorporating inorganic nanotubes fluidly coupled to channels or nanopores for supplying a fluid containing chemical or bio-chemical species are described. In one aspect, two channels are fluidly interconnected with a nanotube. Electrodes on opposing sides of the nanotube establish electrical contact with the fluid therein. A bias current is passed between the electrodes through the fluid, and current changes are detected to ascertain the passage of select molecules, such as DNA, through the nanotube. In another aspect, a gate electrode is located proximal the nanotube between the two electrodes thus forming a nanofluidic transistor. The voltage applied to the gate controls the passage of ionic species through the nanotube selected as either or both ionic polarities. In either of these aspects the nanotube can be modified, or functionalized, to control the selectivity of detection or passage.