Sang Y Park

US Patent:

6514751, Feb 4, 2003

Filed:

Aug 20, 2001

Appl. No.:

09/933570

Inventors:

Timothy W. Johann - Sunnyvale CA
Sang Chul Park - San Jose CA

Assignee:

Incyte Genomics, Inc. - Palo Alto CA

International Classification:

C12Q 168

US Classification:

4352872, 435 6, 435 71, 435 911, 435 912, 536 221, 536 231, 536 243, 536 2431, 536 2432, 536 2433

Abstract:

The present invention provides a method and a composition for detecting the levels of a plurality of biomolecular probes in a sample. In particular, the invention relates to a hybridization composition for detecting the presence or levels of different polynucleotide sequences in a sample.

US Patent:

62776282, Aug 21, 2001

Filed:

Oct 2, 1998

Appl. No.:

9/165465

Inventors:

Timothy W. Johann - Sunnyvale CA
Sang Chul Park - San Jose CA

Assignee:

Incyte Genomics, Inc. - Palo Alto CA

International Classification:

C12M 134
C12Q 168
C12P 1934
C07H 2104
B01D 1508

US Classification:

4352872

Abstract:

The present invention provides a method and a composition for detecting the levels of a plurality of biomolecular probes in a sample. In particular, the invention relates to a hybridization composition for detecting the presence or levels of different polynucleotide sequences in a sample.

US Patent:

20220406561, Dec 22, 2022

Filed:

May 26, 2022

Appl. No.:

17/825261

Inventors:

- Pleasanton CA, US
Bryan Walter REED - San Leandro CA, US
Daniel Joseph MASIEL - Alamo CA, US
Sang Tae PARK - Danville CA, US

International Classification:

H01J 37/24
H01J 37/28
H01J 37/29
H01J 37/147

Abstract:

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

US Patent:

20220336185, Oct 20, 2022

Filed:

Mar 7, 2022

Appl. No.:

17/688339

Inventors:

- Pleasanton CA, US
Bryan Walter REED - San Leandro CA, US
Daniel Joseph MASIEL - Alamo CA, US
Sang Tae PARK - Danville CA, US

International Classification:

H01J 37/24
H01J 37/147
H01J 37/28
H01J 37/29

Abstract:

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

US Patent:

20220328280, Oct 13, 2022

Filed:

Apr 12, 2022

Appl. No.:

17/718976

Inventors:

- Tokyo, JP
Norihiro Okoshi - Tokyo, JP
Yu Jimbo - Tokyo, JP
Sang Tae Park - Pleasanton CA, US

International Classification:

H01J 37/22
H01J 37/28
H01J 37/244

Abstract:

A contamination prevention irradiation device includes a generation unit and a mirror unit. The generation unit generates a laser beam. The mirror unit has a mirror surface for reflecting a laser beam. The laser beam reflected on the mirror surface is applied to a specimen disposed inside an objective lens. The laser beam is composed of a pulse train. Once a laser beam is applied to the specimen before observation of the specimen, deposition of contaminants on the specimen can be prevented for a predetermined subsequent period.

US Patent:

20230071505, Mar 9, 2023

Filed:

Nov 9, 2022

Appl. No.:

17/983560

Inventors:

- Santa Clara CA, US
Zhonghua YAO - Santa Clara CA, US
Sunil SRINIVASAN - San Jose CA, US
Sang Wook PARK - Mountain View CA, US

International Classification:

H01L 21/3065
H01L 21/02

Abstract:

The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

US Patent:

20210398815, Dec 23, 2021

Filed:

Jul 9, 2021

Appl. No.:

17/371176

Inventors:

- Santa Clara CA, US
Zhonghua YAO - Santa Clara CA, US
Sunil SRINIVASAN - San Jose CA, US
Sang Wook PARK - Mountain View CA, US

International Classification:

H01L 21/3065
H01L 21/02

Abstract:

A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

US Patent:

20210082661, Mar 18, 2021

Filed:

Jul 27, 2020

Appl. No.:

16/939576

Inventors:

- Pleasanton CA, US
Sang Tae PARK - Pleasanton CA, US
Bryan REED - Pleasanton CA, US
Daniel MASIEL - Pleasanton CA, US

International Classification:

H01J 37/26
H01J 37/147
H01J 37/244

Abstract:

Methods and systems for acquiring transmission electron microscope video data on a rolling-shutter detector at an enhanced frame rate and without temporal distortions are described. Also described are methods to enhance the dynamic range of image and diffraction data acquired using a transmission electron microscope. The disclosed methods and systems may also be applicable to photon detection and imaging systems.