James R. Grandusky - Waterford NY, US Leo J. Schowalter - Latham NY, US Shawn R. Gibb - Clifton Park NY, US Joseph A. Smart - Mooresville NC, US Shiwen Liu - Painted Post NY, US
In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
Nitride Semiconductor Heterostructures And Related Methods
Leo J. Schowalter - Latham NY, US Joseph A. Smart - Mooresville NC, US Shiwen Liu - Acton MA, US Kenneth E. Morgan - Castleton NY, US Robert T. Bondokov - Watervliet NY, US Timothy J. Bettles - Rexford NY, US Glen A. Slack - Scotia NY, US
Assignee:
Crystal IS, Inc. - Green Island NY
International Classification:
H01L 27/15
US Classification:
257 79, 257E33008
Abstract:
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10cm.
Leo J. Schowalter - Latham NY, US Joseph A. Smart - Mooresville NC, US Shiwen Liu - Acton MA, US Kenneth E. Morgan - Castleton NY, US Robert T. Bondokov - Watervliet NY, US Timothy J. Bettles - Bethlehem PA, US Glen A. Slack - Scotia NY, US
Assignee:
Crystal IS, Inc. - Green Island NY
International Classification:
C30B 1/00
US Classification:
117 9
Abstract:
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10cm.
James R. Grandusky - Waterford NY, US Leo J. Schowalter - Latham NY, US Shawn R. Gibb - Clifton Park NY, US Joseph A. Smart - Mooresville NC, US Shiwen Liu - Painted Post NY, US
International Classification:
H01L 33/06
US Classification:
257 13, 257E33008
Abstract:
In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
Articles Of Controllably Bonded Sheets And Methods For Making Same
- Corning NY, US Robert Alan Bellman - Ithaca NY, US Jiangwei Feng - Ithaca NY, US Georgiy M Guryanov - Boca Raton FL, US Jhih-Wei Liang - Toufen City, TW Shiwen Liu - Painted Post NY, US Prantik Mazumder - Ithaca NY, US
Described herein are articles and methods of making articles, including a first sheet and a second sheet, wherein the thin sheet and carrier are bonded together using a coating layer, preferably a hydrocarbon polymer coating layer, and associated deposition methods and inert gas treatments that may be applied on either sheet, or both, to control van der Waals, hydrogen and covalent bonding between the sheets. The coating layer bonds the sheets together to prevent formation of a permanent bond at high temperature processing while at the same time maintaining a sufficient bond to prevent delamination during high temperature processing.
Liquid Lenses And Methods Of Manufacturing Liquid Lenses
- CORNING NY, US Robert Alan Bellman - Ithaca NY, US Shiwen Liu - Painted Post NY, US Ines Wyrsta - Santa Barbara CA, US
International Classification:
G02B 3/14 G02B 26/00 G02B 3/00 G03F 7/00
Abstract:
A method of fabricating a liquid lens or an array of liquid lenses, and the corresponding liquid lens or array of lenses is disclosed. The method includes patterning an insulative layer () by photolithographic techniques to expose a portion of the conductive layer () and a portion of the insulative layer () having a surface energy below 40 mJ/m. In further embodiments, the liquid lens includes an interface () forming a lens between a polar liquid () and a non-polar liquid () disposed within a cavity (). The interface intersects a surface of the insulative layer () having a surface energy below 40 mJ/m.
Liquid Lens Design Variant With Temperature Sensor On The Outside
- Corning NY, US Shiwen Liu - Painted Post NY, US Nicholas James Pfister - Santa Barbara CA, US Ernesto Sanchez, JR. - Ventura CA, US
International Classification:
G02B 7/02 G02B 3/14 G02B 1/11
Abstract:
A liquid lens apparatus includes a first substrate and a sensor. The first substrate has first and second opposing surfaces, a central portion, and a peripheral portion outside of the central portion. The sensor is formed lithographically on either the first or second surfaces of the peripheral portion of the first substrate such that the sensor is on an exterior surface of the liquid lens apparatus. The sensor is configured to detect a temperature of the liquid lens apparatus to enable compensation for thermal expansion or contraction of the liquid lens apparatus resulting from changes in temperature of the liquid lens apparatus.