Shiwen S Liu

age ~62

from Painted Post, NY

Also known as:
  • Wayne Liu
  • Shi Wen Liu
  • Shiwn Liu
  • Shi-Wen Liu
  • Stephen Liu
  • Liu Shi-Wen
  • Liu Shiwen
Phone and address:
16 Woodland Way, Painted Post, NY 14870

Shiwen Liu Phones & Addresses

  • 16 Woodland Way, Painted Post, NY 14870
  • Goleta, CA
  • 1 Castle Dr, Acton, MA 01720 • 9782644230
  • Wakefield, MA
  • Bedford, MA
  • Corning, NY
  • Woburn, MA

Work

  • Position:
    Professional/Technical

Education

  • Degree:
    Graduate or professional degree

Emails

Us Patents

  • Thick Pseudomorphic Nitride Epitaxial Layers

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  • US Patent:
    8080833, Dec 20, 2011
  • Filed:
    Apr 21, 2010
  • Appl. No.:
    12/764584
  • Inventors:
    James R. Grandusky - Waterford NY, US
    Leo J. Schowalter - Latham NY, US
    Shawn R. Gibb - Clifton Park NY, US
    Joseph A. Smart - Mooresville NC, US
    Shiwen Liu - Painted Post NY, US
  • Assignee:
    Crystal IS, Inc. - Green Island NY
  • International Classification:
    H01L 33/00
  • US Classification:
    257190, 257 13, 257 94, 257103, 257E33028, 257E33067, 438 47
  • Abstract:
    In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
  • Nitride Semiconductor Heterostructures And Related Methods

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  • US Patent:
    8222650, Jul 17, 2012
  • Filed:
    Nov 12, 2009
  • Appl. No.:
    12/617150
  • Inventors:
    Leo J. Schowalter - Latham NY, US
    Joseph A. Smart - Mooresville NC, US
    Shiwen Liu - Acton MA, US
    Kenneth E. Morgan - Castleton NY, US
    Robert T. Bondokov - Watervliet NY, US
    Timothy J. Bettles - Rexford NY, US
    Glen A. Slack - Scotia NY, US
  • Assignee:
    Crystal IS, Inc. - Green Island NY
  • International Classification:
    H01L 27/15
  • US Classification:
    257 79, 257E33008
  • Abstract:
    Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10cm.
  • Thick Pseudomorphic Nitride Epitaxial Layers

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  • US Patent:
    20080187016, Aug 7, 2008
  • Filed:
    Jan 25, 2008
  • Appl. No.:
    12/020006
  • Inventors:
    Leo J. Schowalter - Latham NY, US
    Joseph A. Smart - Mooresville NC, US
    James R. Grandusky - Albany NY, US
    Shiwen Liu - Acton MA, US
  • International Classification:
    H01S 5/20
    H01L 21/02
  • US Classification:
    372 45011, 438 47, 257E21002
  • Abstract:
    Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
  • Nitride Semiconductor Heterostructures And Related Methods

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  • US Patent:
    20090283028, Nov 19, 2009
  • Filed:
    Aug 14, 2006
  • Appl. No.:
    11/503660
  • Inventors:
    Leo J. Schowalter - Latham NY, US
    Joseph A. Smart - Mooresville NC, US
    Shiwen Liu - Acton MA, US
    Kenneth E. Morgan - Castleton NY, US
    Robert T. Bondokov - Watervliet NY, US
    Timothy J. Bettles - Bethlehem PA, US
    Glen A. Slack - Scotia NY, US
  • Assignee:
    Crystal IS, Inc. - Green Island NY
  • International Classification:
    C30B 1/00
  • US Classification:
    117 9
  • Abstract:
    Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10cm.
  • Thick Pseudomorphic Nitride Epitaxial Layers

    view source
  • US Patent:
    20120104355, May 3, 2012
  • Filed:
    Nov 17, 2011
  • Appl. No.:
    13/298570
  • Inventors:
    James R. Grandusky - Waterford NY, US
    Leo J. Schowalter - Latham NY, US
    Shawn R. Gibb - Clifton Park NY, US
    Joseph A. Smart - Mooresville NC, US
    Shiwen Liu - Painted Post NY, US
  • International Classification:
    H01L 33/06
  • US Classification:
    257 13, 257E33008
  • Abstract:
    In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
  • Articles Of Controllably Bonded Sheets And Methods For Making Same

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  • US Patent:
    20230091841, Mar 23, 2023
  • Filed:
    Nov 17, 2022
  • Appl. No.:
    17/989075
  • Inventors:
    - Corning NY, US
    Robert Alan Bellman - Ithaca NY, US
    Jiangwei Feng - Ithaca NY, US
    Georgiy M Guryanov - Boca Raton FL, US
    Jhih-Wei Liang - Toufen City, TW
    Shiwen Liu - Painted Post NY, US
    Prantik Mazumder - Ithaca NY, US
  • International Classification:
    C03C 17/32
    B32B 17/10
    B32B 15/04
    C03C 17/28
    B32B 7/06
    B32B 17/06
  • Abstract:
    Described herein are articles and methods of making articles, including a first sheet and a second sheet, wherein the thin sheet and carrier are bonded together using a coating layer, preferably a hydrocarbon polymer coating layer, and associated deposition methods and inert gas treatments that may be applied on either sheet, or both, to control van der Waals, hydrogen and covalent bonding between the sheets. The coating layer bonds the sheets together to prevent formation of a permanent bond at high temperature processing while at the same time maintaining a sufficient bond to prevent delamination during high temperature processing.
  • Liquid Lenses And Methods Of Manufacturing Liquid Lenses

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  • US Patent:
    20210255370, Aug 19, 2021
  • Filed:
    May 15, 2019
  • Appl. No.:
    17/054929
  • Inventors:
    - CORNING NY, US
    Robert Alan Bellman - Ithaca NY, US
    Shiwen Liu - Painted Post NY, US
    Ines Wyrsta - Santa Barbara CA, US
  • International Classification:
    G02B 3/14
    G02B 26/00
    G02B 3/00
    G03F 7/00
  • Abstract:
    A method of fabricating a liquid lens or an array of liquid lenses, and the corresponding liquid lens or array of lenses is disclosed. The method includes patterning an insulative layer () by photolithographic techniques to expose a portion of the conductive layer () and a portion of the insulative layer () having a surface energy below 40 mJ/m. In further embodiments, the liquid lens includes an interface () forming a lens between a polar liquid () and a non-polar liquid () disposed within a cavity (). The interface intersects a surface of the insulative layer () having a surface energy below 40 mJ/m.
  • Liquid Lens Design Variant With Temperature Sensor On The Outside

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  • US Patent:
    20210048602, Feb 18, 2021
  • Filed:
    Jul 30, 2020
  • Appl. No.:
    16/943732
  • Inventors:
    - Corning NY, US
    Shiwen Liu - Painted Post NY, US
    Nicholas James Pfister - Santa Barbara CA, US
    Ernesto Sanchez, JR. - Ventura CA, US
  • International Classification:
    G02B 7/02
    G02B 3/14
    G02B 1/11
  • Abstract:
    A liquid lens apparatus includes a first substrate and a sensor. The first substrate has first and second opposing surfaces, a central portion, and a peripheral portion outside of the central portion. The sensor is formed lithographically on either the first or second surfaces of the peripheral portion of the first substrate such that the sensor is on an exterior surface of the liquid lens apparatus. The sensor is configured to detect a temperature of the liquid lens apparatus to enable compensation for thermal expansion or contraction of the liquid lens apparatus resulting from changes in temperature of the liquid lens apparatus.

Googleplus

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Facebook

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Shiwen Liu

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Friends:
Haoyue Yu, Sebastian Loerscher, Ding Fei, Nina van Bergen, Danqiu Wu
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Liu Shiwen

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Friends:
Oscar Ontiveros, Pretty Princess, Dongfeng Ding, Miriam Auss Trias

Youtube

Liu Shiwen vs Chen Meng | 2019 World Champion...

(Video Creator: MALONG Fanmade Channel ) ITTF All content is the copyr...

  • Duration:
    13m 5s

9 Minutes Of Liu Shiwen Destroying These Top ...

Liu Shiwen On FIRE HERE Ding Ning, Chen Meng and many others destroyed...

  • Duration:
    9m

Xiaona Shan vs Liu Shiwen | WS | Singapore Sm...

Download the new WTT app and follow us on social media for a full 360 ...

  • Duration:
    8m 4s

Top Crazy Table Tennis Shots from Liu Shiwen

She's 5-time Women's #ITTFWorldCup Champion She's the reigning World C...

  • Duration:
    6m 21s

Shiwen Liu: My Rio Highlights

Subscribe to @olympics: The best moments from the 2016 Summer Olympi...

  • Duration:
    59s

FULL MATCH | LIU Shiwen (CHN) vs ITO Mima (JP...

Rewatch the Women's Team Final between China and Japan at the Liebherr...

  • Duration:
    41m 53s

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