Song Shil Park

US Patent:

6835672, Dec 28, 2004

Filed:

Oct 15, 1998

Appl. No.:

09/173129

Inventors:

Song C. Park - Plano TX
Boyang Lin - Richardson TX
Ming Hwang - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2131

US Classification:

438770, 438787

Abstract:

An embodiment of the instant invention is a method of oxidizing a first feature (feature and/or feature of FIG. and feature of FIG. ) while leaving a second feature substantially unoxidized (features and of FIG. and features and of FIG. ), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of gas selected from the group consisting of O , N O, CO , H O, and any combination thereof, and the hydrogen-containing gas is comprised of H. The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.