Tai T Ngo

US Patent:

6464795, Oct 15, 2002

Filed:

May 3, 2000

Appl. No.:

09/563573

Inventors:

Semyon Sherstinsky - San Francisco CA
Calvin Augason - Los Altos CA
Leonel A. Zuniga - San Jose CA
Jun Zhao - Cupertino CA
Talex Sajoto - Campbell CA
Leonid Selyutin - San Leandro CA
Joseph Yudovsky - Campbell CA
Maitreyee Mahajani - San Jose CA
Steve G. Ghanayem - Sunnyvale CA
Tai T. Ngo - Dublin CA
Arnold Kholodenko - San Francisco CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G23C 1600

US Classification:

118728, 118715, 118725

Abstract:

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.