Dec 2010 to Dec 2011 Director of Technology & Business DevFEI Company
2007 to Dec 2010 Sr. Business Development/Marketing ManagerHitachi High Technologies America
Jan 2005 to Aug 2007 Sr. Product Development ManagerKLA-Tencor Corp.
2002 to 2004 Research ScientistLawrence Berkeley National Lab
Aug 1997 to May 2002 Graduate Researcher
Education:
University of California, Berkeley Jan 1997 to Jan 2002 Ph.D. in Nuclear EngineeringUniversity of California, Berkeley - Walter A. Haas School of Business Jan 1998 to Jan 2000 MOT Program in Management of TechnologyIndependence HS
Skills:
Optics, Nanotechnology, Metrology, Physics, Failure Analysis, Scanning Electron Microscopy, Product Development, Semiconductors, Product Management, Product Marketing, Semiconductor Manufacturing, Materials Science, Characterization, Engineering, R&D, Research, Materials, SEM, Spectroscopy, Thin Films
Dr. Ngo graduated from the Med & Pharm Univ, Ho Chi Minh City, Vietnam (942 01 Eff 1/83) in 1973. He works in Melbourne, FL and specializes in Internal Medicine. Dr. Ngo is affiliated with Holmes Regional Medical Center, Palm Bay Hospital and Wuesthoff Medical Center Melbourne.
VA Long Beach Healthcare Outpatient Clinic 5901 E 7 St, Long Beach, CA 90822 5628268000 (phone), 5628268180 (fax)
Education:
Medical School Med & Pharm Univ, Ho Chi Minh City, Viet Nam (840 01 Prior 1/71) Graduated: 1969
Conditions:
Contact Dermatitis Diabetes Mellitus (DM) Disorders of Lipoid Metabolism Hypertension (HTN) Overweight and Obesity
Languages:
English
Description:
Dr. Ngo graduated from the Med & Pharm Univ, Ho Chi Minh City, Viet Nam (840 01 Prior 1/71) in 1969. He works in Long Beach, CA and specializes in Internal Medicine. Dr. Ngo is affiliated with VA Long Beach Healthcare System.
Ka-Ngo Leung - Hercules CA Yung-Hee Yvette Lee - Berkeley CA Vinh Ngo - San Jose CA Nastaran Zahir - Greenbrae CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01J 3708
US Classification:
25049221, 2504923, 2504921, 250396 R
Abstract:
A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.