Deutsche Bank Securities - New York, NY Jun 2012 - Aug 2012
Investment Banking Summer Analyst
Smith College Investment Club - Northampton, MA Sep 2010 - May 2012
Sector Head (Consumer & Retail)
PwC Consulting - Shanghai May 2011 - Aug 2011
Summer Intern
John Leggott Student Orchestra - United Kingdom Sep 2008 - May 2009
Second Violinist
Education:
Smith College 2010 - 2013
BA, Mathematics, Economics
Oct 2012 to 2000 Senior Process EngineerLam Research San Jose, CA Jun 2012 to Sep 2012 Process Development Engineer InternUniversity of Rochester Rochester, NY Jul 2007 to Sep 2012 Graduate Research Assistant
Education:
University of Rochester Rochester, NY 2007 to 2012 PhD in Chemical EngineeringIPE, Chinese Academy of Sciences 2003 to 2006 Master of Engineering in Chemical EngineeringUniversity of Science and Technology Beijing 1999 to 2003 Bachelor of Engineering in Metallic Materials Engineering
Skills:
Photovoltaics, Vacuum Systems, Thin Films, Semiconductors, -- fabrication of thin film inorganic materials and devices, -- designing and building vacuum deposition apparatus for thin film materials.
Name / Title
Company / Classification
Phones & Addresses
Wei Xiang Xia
SAGITTARIUS NAIL & SPA CORP
142 W 32 St 2, New York, NY 10001
Wei Xia President
ALLSPHERE, INC
1840 Gtwy Dr STE 200, San Mateo, CA 94404
Us Patents
One-Time Programmable Memory Cell With Shiftable Threshold Voltage Transistor
Frank Hui - San Jose CA, US Xiangdong Chen - Irvine CA, US Wei Xia - Irvine CA, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 17/00
US Classification:
365 94, 365104, 365105
Abstract:
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.
Frank Hui - San Jose CA, US Xiangdong Chen - Irvine CA, US Wei Xia - Irvine CA, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 17/00
US Classification:
365104, 365 94, 365105
Abstract:
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.
Programmable Memory Cell With Shiftable Threshold Voltage Transistor
Frank Hui - San Jose CA, US Xiangdong Chen - Irvine CA, US Wei Xia - Irvine CA, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
G11C 17/00
US Classification:
365 94, 365104, 365105
Abstract:
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.
Automatic Generation Of Bill Of Process From Digital Twin Using Exploratory Simulation
- Munich, DE Juan L. Aparicio Ojea - Moraga CA, US Ines Ugalde Diaz - Redwood City CA, US Gokul Narayanan Sathya Narayanan - Emeryville CA, US Eugen Solowjow - Berkeley CA, US Wei Xi Xia - Daly City CA, US Yash Shahapurkar - Berkeley CA, US Shashank Tamaskar - Mohali, IN Heiko Claussen - Wayland MA, US
International Classification:
G06F 30/27
Abstract:
A method for automatically generating a bill of process in a manufacturing system comprising: receiving design information representative of a product to be produced; iteratively performing simulations of the manufacturing system; identifying manufacturing actions based on the simulations; optimizing the identified manufacturing actions to efficiently produce the product to be produced; generating, by the manufacturing system, a bill of process for producing the product. Simulations may be performed using a digital twin of the product being produced and a digital twin of the environment. System actions are optimized using a reinforcement learning technique to automatically produce a bill of process based on the design information of the product and task specifications.
Speaker-Turn-Based Online Speaker Diarization With Constrained Spectral Clustering
- Mountain View CA, US Han Lu - Santa Clara CA, US Evan Clark - San Francisco CA, US Ignacio Lopez Moreno - Brooklyn NY, US Hasim Sak - Santa Clara CA, US Wei Xia - Mountain View CA, US Taral Joglekar - Sunnyvale CA, US Anshuman Tripathi - Mountain View CA, US
Assignee:
Google LLC - Mountain View CA
International Classification:
G10L 15/26 G10L 15/16 G10L 15/06
Abstract:
A method includes receiving an input audio signal that corresponds to utterances spoken by multiple speakers. The method also includes processing the input audio to generate a transcription of the utterances and a sequence of speaker turn tokens each indicating a location of a respective speaker turn. The method also includes segmenting the input audio signal into a plurality of speaker segments based on the sequence of speaker tokens. The method also includes extracting a speaker-discriminative embedding from each speaker segment and performing spectral clustering on the speaker-discriminative embeddings to cluster the plurality of speaker segments into k classes. The method also includes assigning a respective speaker label to each speaker segment clustered into the respective class that is different than the respective speaker label assigned to the speaker segments clustered into each other class of the k classes.
Real-Time Production Scheduling With Deep Reinforcement Learning And Monte Carlo Tree Research
- Munich, DE Wei Xi Xia - Daly City CA, US Juan L. Aparicio Ojea - Moraga NJ, US
International Classification:
G05B 19/418 G06N 3/08 G06N 7/00
Abstract:
Systems and methods provide real-time production scheduling by integrating deep reinforcement learning and Monte Carlo tree search. A manufacturing process simulator is used to train a deep reinforcement learning agent to identify the sub-optimal policies for a production schedule. A Monte Carlo tree search agent is implemented to speed up the search for near-optimal policies of higher quality from the sub-optimal policies.