Wei Xia

US Patent:

8050076, Nov 1, 2011

Filed:

Aug 7, 2009

Appl. No.:

12/462732

Inventors:

Frank Hui - San Jose CA, US
Xiangdong Chen - Irvine CA, US
Wei Xia - Irvine CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

G11C 17/00

US Classification:

365 94, 365104, 365105

Abstract:

According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.

US Patent:

8363445, Jan 29, 2013

Filed:

Oct 27, 2011

Appl. No.:

13/283267

Inventors:

Frank Hui - San Jose CA, US
Xiangdong Chen - Irvine CA, US
Wei Xia - Irvine CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

G11C 17/00

US Classification:

365104, 365 94, 365105

Abstract:

According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.

US Patent:

8422265, Apr 16, 2013

Filed:

Oct 27, 2011

Appl. No.:

13/283418

Inventors:

Frank Hui - San Jose CA, US
Xiangdong Chen - Irvine CA, US
Wei Xia - Irvine CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

G11C 17/00

US Classification:

365 94, 365104, 365105

Abstract:

According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50. 0 millivolts.

US Patent:

20230089308, Mar 23, 2023

Filed:

Dec 14, 2021

Appl. No.:

17/644261

Inventors:

- Mountain View CA, US
Han Lu - Santa Clara CA, US
Evan Clark - San Francisco CA, US
Ignacio Lopez Moreno - Brooklyn NY, US
Hasim Sak - Santa Clara CA, US
Wei Xia - Mountain View CA, US
Taral Joglekar - Sunnyvale CA, US
Anshuman Tripathi - Mountain View CA, US

Assignee:

Google LLC - Mountain View CA

International Classification:

G10L 15/26
G10L 15/16
G10L 15/06

Abstract:

A method includes receiving an input audio signal that corresponds to utterances spoken by multiple speakers. The method also includes processing the input audio to generate a transcription of the utterances and a sequence of speaker turn tokens each indicating a location of a respective speaker turn. The method also includes segmenting the input audio signal into a plurality of speaker segments based on the sequence of speaker tokens. The method also includes extracting a speaker-discriminative embedding from each speaker segment and performing spectral clustering on the speaker-discriminative embeddings to cluster the plurality of speaker segments into k classes. The method also includes assigning a respective speaker label to each speaker segment clustered into the respective class that is different than the respective speaker label assigned to the speaker segments clustered into each other class of the k classes.