Wei C Zhao

US Patent:

20110266529, Nov 3, 2011

Filed:

Apr 26, 2011

Appl. No.:

13/094608

Inventors:

Wei ZHAO - Gainesville FL, US
Yabing QI - Plainsboro NJ, US
Antoine KAHN - Princeton NJ, US
Seth MARDER - Atlanta GA, US
Stephen BARLOW - Atlanta GA, US

Assignee:

THE TRUSTEES OF PRINCETON UNIVERSITY - Princeton NJ
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 51/30

US Classification:

257 40, 257E51005

Abstract:

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

US Patent:

20220244411, Aug 4, 2022

Filed:

Apr 25, 2022

Appl. No.:

17/727995

Inventors:

- Albany NY, US
Andrew Labella - New Rochelle NY, US
Wei Zhao - East Setauket NY, US

International Classification:

G01T 1/202
G01T 1/164
G01T 1/20
G01T 1/29

Abstract:

Provided is a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

US Patent:

20230016122, Jan 19, 2023

Filed:

Dec 23, 2021

Appl. No.:

17/560529

Inventors:

- Santa Clara CA, US
Hans-Joachim L. Gossmann - Summit NJ, US
Dennis Rodier - Francestown NH, US
Stanislav S. Todorov - Topsfield MA, US
Richard White - Newmarket NH, US
Wei Zhao - Lexington MA, US
Wei Zou - Lexington MA, US
Supakit Charnvanichborikarn - Gloucester MA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 14/54
H01J 37/304
C23C 14/48
H01J 37/317
H01L 29/06

Abstract:

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

US Patent:

20200326434, Oct 15, 2020

Filed:

Jun 12, 2020

Appl. No.:

16/899636

Inventors:

- Albany NY, US
Andrew Labella - New Rochelle NY, US
Wei Zhao - East Setauket NY, US

International Classification:

G01T 1/202
G01T 1/164
G01T 1/20
G01T 1/29

Abstract:

Provided is are a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

US Patent:

20190131177, May 2, 2019

Filed:

Oct 26, 2017

Appl. No.:

15/794600

Inventors:

- Grand Cayman, KY
Wei Zhao - Fort Lee NJ, US
Haiting Wang - Clifton Park NY, US

International Classification:

H01L 21/8234
H01L 21/02
H01L 21/311
H01L 29/66
H01L 29/06
H01L 21/306
H01L 27/088

Abstract:

Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. A plurality of sacrificial layers are formed on a dielectric layer. An opening is formed that includes a first section that extends through the sacrificial layers and a second section that extends through the dielectric layer. A semiconductor material is epitaxially grown inside the opening to form a fin. The first section of the opening has a first width dimension, and the second section of the opening has a second width dimension that is less than the first width dimension.

US Patent:

20180323191, Nov 8, 2018

Filed:

Jan 17, 2018

Appl. No.:

15/873006

Inventors:

- Grand Cayman, KY
WEI ZHAO - FORT LEE NJ, US
HONG YU - REXFORD NY, US
XUSHENG WU - BALLSTON LAKE NY, US
HUI ZANG - GUILDERLAND NY, US
ZHENYU HU - CLIFTON PARK NY, US

Assignee:

GLOBALFOUNDRIES INC. - GRAND CAYMAN

International Classification:

H01L 27/088
H01L 29/06
H01L 21/8234
H01L 21/02
H01L 21/311
H01L 21/308

Abstract:

Disclosed is a semiconductor structure, including at least one fin-type field effect transistor and at least one single-diffusion break (SDB) type isolation region, and a method of forming the semiconductor structure. In the method, an isolation bump is formed above an isolation region within a semiconductor fin and sidewall spacers are formed on the bump. During an etch process to reduce the height of the bump and to remove isolation material from the sidewalls of the fin, the sidewall spacers prevent lateral etching of the bump. During an etch process to form source/drain recesses in the fin, the sidewalls spacers protect the semiconductor material adjacent to the isolation region. Consequently, the sides and bottom of each recess include semiconductor surfaces and the angle of the top surfaces of the epitaxial source/drain regions formed therein is minimized, thereby minimizing the risk of unlanded source/drain contacts.

US Patent:

20170226067, Aug 10, 2017

Filed:

Aug 4, 2015

Appl. No.:

15/502356

Inventors:

- Fort Washington PA, US
Chengguo Dong - Staten Island NY, US
Yi Fan - Doylestown PA, US
Katerina Leftheris - San Diego CA, US
Stephen D. Lotesta - Burlington NJ, US
Suresh B. Singh - Kendall Park NJ, US
Colin M. Tice - Maple Glen PA, US
Wei Zhao - North Potomac MD, US
Yajun Zheng - Hockessin DE, US
Linghang Zhuang - Chalfont PA, US

Assignee:

Vitae Pharmaceuticals, Inc. - Fort Washington PA

International Classification:

C07D 241/04
C07D 401/04
C07D 413/04
C07D 403/14
C07D 513/04
C07D 417/14
C07D 413/14
C07D 403/04
C07D 417/04

Abstract:

Provided are novel compounds of Formula (I): pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are liver X receptor modulators, and which are useful in the treatment of diseases and disorders associated with the liver X receptor. Also provided are the compounds of Formula (I) and pharmaceutical compositions thereof for treating atherosclerosis, cardiovascular disease, Alzheimer's disease, dermatitis, dyslipidemia, cancer and other diseases or disorders.

US Patent:

20170227846, Aug 10, 2017

Filed:

Apr 24, 2017

Appl. No.:

15/495928

Inventors:

- Skokie IL, US
Yan Hu - Chicago IL, US
Wei Zhao - New York NY, US
Antonio Facchetti - Chicago IL, US

International Classification:

G03F 7/038
H01L 21/02
G03F 7/16
G03F 7/42
G03F 7/20
G03F 7/32
G03F 7/075
G03F 7/40
G03F 7/004

Abstract:

The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.