Xiao Liu

US Patent:

7276787, Oct 2, 2007

Filed:

Dec 5, 2003

Appl. No.:

10/729254

Inventors:

Daniel Charles Edelstein - White Plains NY, US
Paul Stephen Andry - Mohegan Lake NY, US
Leena Paivikki Buchwalter - Hopewell Junction NY, US
Jon Alfred Casey - Poughkeepsie NY, US
Sherif A. Goma - Hawthorne NY, US
Raymond R. Horton - Dover Plains NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Michael Wayne Lane - Cortlandt Manor NY, US
Xiao Hu Liu - Croton on Hudson NY, US
Chirag Suryakant Patel - Peekskill NY, US
Edmund Juris Sprogis - Underhill VT, US
Michelle Leigh Steen - Danbury CT, US
Brian Richard Sundlof - Beacon NY, US
Cornelia K. Tsang - Mohegan Lake NY, US
George Frederick Walker - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 23/48
H01L 23/498
H01L 21/4763
H01L 29/40
H01L 23/52

US Classification:

257698, 257E23067, 257E23075, 257E23011, 257E25013, 257E21597, 257E23006, 257E23172, 257E23174, 257774, 257773, 257702, 257680, 257700, 257758

Abstract:

A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

US Patent:

7394089, Jul 1, 2008

Filed:

Aug 25, 2006

Appl. No.:

11/467294

Inventors:

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 47/00

US Classification:

257 4, 257209, 257529, 257E2917

Abstract:

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

US Patent:

7491965, Feb 17, 2009

Filed:

May 28, 2008

Appl. No.:

12/127994

Inventors:

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 47/00

US Classification:

257 4, 257209, 257529, 257E2917

Abstract:

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

US Patent:

7582670, Sep 1, 2009

Filed:

Apr 13, 2005

Appl. No.:

11/104422

Inventors:

Longgui Wang - Flushing NY, US
Xiao Mei Liu - Flushing NY, US
Lian Mo - Palo Alto CA, US
Simon K. Mencher - New York NY, US

Assignee:

Natrogen Therapeutics, Inc. - Milwaukee WI

International Classification:

A61K 31/40
A61K 31/404
A61K 31/56

US Classification:

514414, 514415, 514416, 514406, 514171, 51425409, 514570, 514159

Abstract:

The invention relates to pharmaceutical compositions and methods of treating inflammatory-related diseases associated with pro-inflammatory cytokine expression and/or reduced expression of anti-inflammatory cytokines. The method typically comprises administration of one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, such as, Meisoindigo and NATURA. Preferably the pharmaceutical composition comprises one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, an anti-inflammatory agent, and a pharmaceutically acceptable carrier.

US Patent:

7790577, Sep 7, 2010

Filed:

Jul 17, 2008

Appl. No.:

12/175006

Inventors:

Xiao Hu Liu - Briarcliff Manor NY, US
Chih-Chao Yang - Glenmont NY, US
Haining Sam Yang - Wappingers Falls NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438462, 438460

Abstract:

An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a set of wiring levels stacked from a first wiring level to a last wiring level; and a respective void in each wiring level of two or more wiring levels of the set wiring levels, each respective void extending in a continuous ring parallel and proximate to a perimeter of the integrated circuit chip, a void of a higher wiring level stacked directly over but not contacting a void of a lower wiring level, the respective voids forming a crack stop.

US Patent:

7955952, Jun 7, 2011

Filed:

Jul 17, 2008

Appl. No.:

12/174994

Inventors:

Xiao Hu Liu - Briarcliff Manor NY, US
Chih-Chao Yang - Glenmont NY, US
Haining Sam Yang - Wappingers Falls NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00
H01L 21/00

US Classification:

438462, 257618, 257620, 257E21523, 257E21532, 438113, 438460, 438461

Abstract:

An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a continuous first stress ring proximate to a perimeter of the integrated circuit chip, respective edges of the first stress ring parallel to respective edges of the integrated circuit chip; a continuous second stress ring between the first stress ring and the perimeter of the integrated circuit chip, respective edges the second stress ring parallel to respective edges of the integrated circuit chip, the first and second stress rings having opposite internal stresses; a continuous gap between the first stress ring and the second stress ring; and a set of wiring levels from a first wiring level to a last wiring level on the substrate.

US Patent:

8138066, Mar 20, 2012

Filed:

Oct 1, 2008

Appl. No.:

12/242990

Inventors:

Chung Woh Lai - Singapore, SG
Xiao Hu Liu - Briarcliff manor NY, US
Anita Madan - Danbury CT, US
Klaus W. Schwarz - Somers NY, US
J. Campbell Scott - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/322

US Classification:

438473, 438143, 438310, 2504922, 117 2, 117 3, 257E21318

Abstract:

A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

US Patent:

8394847, Mar 12, 2013

Filed:

Aug 26, 2009

Appl. No.:

12/548083

Inventors:

Longgui Wang - Flushing NY, US
Xiao Mei Liu - Flushing NY, US
Lian Mo - Palo Alto CA, US
Simon K. Mencher - New York NY, US

Assignee:

Natrogen Therapeutics International, Inc. - New York NY

International Classification:

A01N 43/38
A01N 43/12
A01N 43/06
A61K 31/40
A61K 31/38
A61K 31/105

US Classification:

514414, 514415, 514412, 514443, 514448, 514421

Abstract:

The invention relates to pharmaceutical compositions and methods of treating inflammatory-related diseases associated with pro-inflammatory cytokine expression and/or reduced expression of anti-inflammatory cytokines. The method typically comprises administration of one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, such as, Meisoindigo and NATURA. Preferably the pharmaceutical composition comprises one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, an anti-inflammatory agent, and a pharmaceutically acceptable carrier.