Xiao Gordon Liu - Fremont CA, US Wei Guo Liu - Sunnyvale CA, US
Assignee:
AXT, Inc. - Fremont CA
International Classification:
C30B011/06
US Classification:
117 81, 117 82, 117 83, 117223
Abstract:
Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
Silicon Chip Carrier With Conductive Through-Vias And Method For Fabricating Same
Daniel Charles Edelstein - White Plains NY, US Paul Stephen Andry - Mohegan Lake NY, US Leena Paivikki Buchwalter - Hopewell Junction NY, US Jon Alfred Casey - Poughkeepsie NY, US Sherif A. Goma - Hawthorne NY, US Raymond R. Horton - Dover Plains NY, US Gareth Geoffrey Hougham - Ossining NY, US Michael Wayne Lane - Cortlandt Manor NY, US Xiao Hu Liu - Croton on Hudson NY, US Chirag Suryakant Patel - Peekskill NY, US Edmund Juris Sprogis - Underhill VT, US Michelle Leigh Steen - Danbury CT, US Brian Richard Sundlof - Beacon NY, US Cornelia K. Tsang - Mohegan Lake NY, US George Frederick Walker - New York NY, US
Assignee:
International Business Machines Corporation - Armonk NY
A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.
Heat-Shielded Low Power Pcm-Based Reprogrammable Efuse Device
James P. Doyle - Bronx NY, US Bruce G. Elmegreen - Golden Bridge NY, US Lia Krusin-Elbaum - Dobbs Ferry NY, US Chung Hon Lam - Peekskill NY, US Xiao Hu Liu - Briarcliff Manor NY, US Dennis M. Newns - Yorktown Heights NY, US Christy S. Tyberg - Mahopac NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 47/00
US Classification:
257 4, 257209, 257529, 257E2917
Abstract:
An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
Negative Thermal Expansion System (Ntes) Device For Tce Compensation In Elastomer Composites And Conductive Elastomer Interconnects In Microelectronic Packaging
Gareth Geoffrey Hougham - Ossining NY, US S. Jay Chey - Ossining NY, US James Patrick Doyle - Bronx NY, US Xiao Hu Liu - Croton On Hudson NY, US Christopher V. Jahnes - Upper Saddle River NJ, US Paul Alfred Lauro - Brewster NY, US Nancy C. LaBianca - Yalesville CT, US Michael J. Rooks - Briarcliff Manor NY, US
Assignee:
International Business Machines Corporation - Armonk NY
A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.
Heat-Shielded Low Power Pcm-Based Reprogrammable Efuse Device
James P. Doyle - Bronx NY, US Bruce G. Elmegreen - Golden Bridge NY, US Lia Krusin-Elbaum - Dobbs Ferry NY, US Chung Hon Lam - Peekskill NY, US Xiao Hu Liu - Briarcliff Manor NY, US Dennis M. Newns - Yorktown Heights NY, US Christy S. Tyberg - Mahopac NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 47/00
US Classification:
257 4, 257209, 257529, 257E2917
Abstract:
An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
Negative Thermal Expansion System (Ntes) Device For Tce Compensation In Elastomer Composites And Conductive Elastomer Interconnects In Microelectronic Packaging
Gareth Geoffrey Hougham - Ossining NY, US S. Jay Chey - Ossining NY, US James Patrick Doyle - Bronx NY, US Xiao Hu Liu - Croton On Hudson NY, US Christopher V. Jahnes - Upper Saddle River NJ, US Paul Alfred Lauro - Brewster NY, US Nancy C. LaBianca - Yalesville CT, US Michael J. Rooks - Briarcliff Manor NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/00
US Classification:
438 53, 257E21254, 257E27008
Abstract:
A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.
Negative Coefficient Of Thermal Expansion Particles And Method Of Forming The Same
Gareth Geoffrey Hougham - Ossining NY, US Xiao Hu Liu - Croton On Hudson NY, US S. Jay Chey - Ossining NY, US James Patrick Doyle - Bronx NY, US Joseph Zinter, Jr. - Brewster NY, US Michael J. Rooks - Briarcliff Manor NY, US Brian Richard Sundlof - Beacon NY, US Jon Alfred Casey - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 15/02
US Classification:
4283133, 4283134, 4283139, 428570, 252512
Abstract:
A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.
Methods Of Treating An Inflammatory-Related Disease
The invention relates to pharmaceutical compositions and methods of treating inflammatory-related diseases associated with pro-inflammatory cytokine expression and/or reduced expression of anti-inflammatory cytokines. The method typically comprises administration of one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, such as, Meisoindigo and NATURA. Preferably the pharmaceutical composition comprises one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, an anti-inflammatory agent, and a pharmaceutically acceptable carrier.
ClassWish.org New York, NY Apr 2014 to Jun 2014 InternshipHofstra University
Nov 2012 to Sep 2013 Resident Safety RepresentativeBank of East Asia (China) Co., LTD
Feb 2012 to Apr 2012 Internship --- Customer Manager AssistantBeijing Xingfu Property Management Agency Co., LTD
Jul 2010 to Aug 2010 Internship --- Accounting Assistant
Education:
Frank G. Zarb School of Business, Hofstra University Hempstead, NY Apr 2000 to May 2014 Master of Science in Accounting ProgramCapital University of Economics and Business Apr 2000 to Jul 2012 Bachelor of Business Administration in Accounting
Feb 2011 to Present General Cashier / Account PayableThompson LES New York, NY Jul 2008 to Feb 2011 Mini BarWenco Beverage Corp Brooklyn, NY Jun 2003 to Sep 2006 Level 2 Help DeskKIB, Inc New York, NY Aug 1999 to Mar 2003 Help DeskComputer Universe Brooklyn, NY Aug 1998 to Jul 1999 Computer TechnicianMarshall University Huntington, WV Jul 1993 to May 1996 Computer Lab Assistant
Education:
Marshall University Huntington, WV Jul 1996 B.S. in Computer ScienceSaint Albans High School Alban Jun 1992
Baystate Health AssociatesBaystate Medical Center 759 Chestnut St, Springfield, MA 01199 4137940000 (phone), 4137940306 (fax)
Education:
Medical School Liaoning Coll of Trad Chinese Med, Shenyang, Liaoning, China Graduated: 1987
Languages:
Chinese English French Spanish
Description:
Dr. Liu graduated from the Liaoning Coll of Trad Chinese Med, Shenyang, Liaoning, China in 1987. She works in Springfield, MA and specializes in Internal Medicine. Dr. Liu is affiliated with Baystate Medical Center.
Liza Young, Bill Turner, Leslie Christensen, Aleksey Rustamov, William Clinton, Shad Housein, M K, A Wells, Sara Cross, Khaled Kashef, Carl Wetherbee, Lukcy Sss