Xiaoqiang Jiang from Chandler, AZ, age 39

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Location:

Chandler, AZ

Industry:

Semiconductors

Work:

Asm
Process Engineer

Method Of Forming A Germanium Oxynitride Film
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US Patent:

20170317194, Nov 2, 2017
Filed:

May 2, 2016
Appl. No.:

15/144506
Inventors:

- Almere, NL
Qi Xie - Leuven, BE
Jan Willem Maes - Wilrijk, BE
Xiaoqiang Jiang - Phoenix AZ, US
Michael Eugene Givens - Scottsdale AZ, US
International Classification:

H01L 29/66
H01L 21/02
H01L 21/02
H01L 21/02
Abstract:

A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

System And Method For Gas-Phase Passivation Of A Semiconductor Surface
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US Patent:

20170117202, Apr 27, 2017
Filed:

Jan 3, 2017
Appl. No.:

15/397237
Inventors:

- Almere, NL
Michael E. Givens - Scottsdale AZ, US
Qi Xie - Lueven, BE
Xiaoqiang Jiang - Tempe AZ, US
Petri Raisanen - Gilbert AZ, US
Pauline Calka - Leuven, BE
International Classification:

H01L 23/31
C23C 16/40
C23C 16/455
H01L 21/02
H01L 23/29
Abstract:

Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

Implementing Atomic Layer Deposition For Gate Dielectrics
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US Patent:

20170110313, Apr 20, 2017
Filed:

Oct 5, 2016
Appl. No.:

15/286503
Inventors:

- Almere, NL
Xiaoqiang Jiang - Tempe AZ, US
Qi Xie - Lueven, BE
Michael Eugene Givens - Scottsdale AZ, US
Jan Willem Maes - Wilrijk, BE
Jerry Chen - Chandler AZ, US
International Classification:

H01L 21/02
H01L 29/78
H01L 29/20
H01L 29/51
C23C 16/455
H01L 29/16
Abstract:

A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Methods For Semiconductor Passivation By Nitridation After Oxide Removal
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US Patent:

20160358835, Dec 8, 2016
Filed:

May 31, 2016
Appl. No.:

15/169430
Inventors:

- Almere, NL
Fu Tang - Gilbert AZ, US
Michael Givens - Scottsdale AZ, US
Petri Raisanen - Gilbert AZ, US
Jan Willem Maes - Wilrijk, BE
Xiaoqiang Jiang - Chandler AZ, US
International Classification:

H01L 23/31
H01L 29/161
H01L 29/51
C23C 16/52
H01L 21/02
C23C 16/40
C23C 16/30
C23C 16/455
H01L 29/10
H01L 21/28
Abstract:

In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Xiaoqiang Jiang