Yi C Liu

US Patent:

6343511, Feb 5, 2002

Filed:

Aug 9, 1999

Appl. No.:

09/370767

Inventors:

Lawrence C. Lynnworth - Waltham MA
Yi Liu - Bolton MA

Assignee:

Panametrics, Inc. - Waltham MA

International Classification:

G01N 2928

US Classification:

73644, 7386118

Abstract:

An encapsulated or rigid bundle of rods forms a substantially non-dispersive buffer usable in extreme environments, operable over wide bandwidth, and repairable in the field. The rigid assembly extends through a nozzle or flanged pipe penetration to launch its signals directly in the fluid at a defined angle. The bundles are non-degrading wave guides to carry signals through degrading environments. This is useful for numerous stack, freestream and chordal path configurations, as well as clamp-on systems and special mode-converting configurations. Beam shaping and steering may be passively effected with patterned bundle constructions, and plural faces, which may be stepped or angled, may define multiple oblique, reflective or different length paths while mounted in spoolpieces at normal incidence.

US Patent:

6349599, Feb 26, 2002

Filed:

May 2, 2000

Appl. No.:

09/563474

Inventors:

Lawrence C. Lynnworth - Waltham MA
Yi Liu - Bolton MA

Assignee:

Panametrics, Inc. - Waltham MA

International Classification:

G01N 2900

US Classification:

73644

Abstract:

An ultrasonic coupling assembly includes a barrier layer that contacts the wall, and a generally thicker layer formed of a compliant material such as zinc foil that extends over the first layer. A third layer may cover and enclose the compliant layer, e. g. , by folding the first layer over and on top of the second layer to cover the edge faces thereof. An exemplary embodiment is implemented using gold foil approximately one mil thick for the first layer, and zinc sheeting approximately four mils thick for the second layer. Use of inert top and bottom, or outside, layers prevents the inadvertent installation of the coupling element with the compliant layer directly contacting the wall. Disk embodiments may employ a stack of separate disks formed of foils or sheets of the respective materials. For cryogenic applications, a material such as indium may be used for the second layer without risk of its alloying or migration through the first layer.

US Patent:

6639087, Oct 28, 2003

Filed:

Aug 22, 2002

Appl. No.:

10/225902

Inventors:

Jay F. Larrow - Wakefield MA
Serge Jasmin - Watertown MA
Yi Liu - Weymouth MA
Marcello Di Mare - Belmont MA

Assignee:

Rhodia Pharma Solutions Inc. - Cranbury NJ

International Classification:

C07D30132

US Classification:

549541, 549513, 549540, 502150, 502170, 502171

Abstract:

A method for stereoselective chemical synthesis, includes the steps of: (A) reacting a nucleophile and chiral or prochiral cyclic subtrate, said substrate comprising a carbocycle or a heterocycle having a reactive center susceptible to nucleophilic attack by the nucleophile, in the presence of a chiral non-racemic catalyst to produce a product mixture comprising a stereomerically enriched product wherein the product mixture further comprises a catalyst residue, at least a portion of the catalyst residue is in a first oxidation state, and the catalyst residue in the first oxidation state is active in catalyzing degradation of the stereoisomerically enriched product, and (B) chemically or electochemically changing the oxidation state of the catalyst residue from the first oxidation state to a second oxidation state, wherein catalyst residue in the second oxidation state is less active in catalyzing degradation of the stereoisomerically enriched product than is catalyst residue in the first oxidation state. The method reduces erosion of the chiral purity of the stereoisomerically enriched product and reduces the chemical transformation to side products of the stereoisomerically enriched product and co-product(s). The deactivated catalyst is recoverable and recyclable.

US Patent:

6693206, Feb 17, 2004

Filed:

Aug 22, 2002

Appl. No.:

10/225869

Inventors:

Yi Liu - Weymouth MA
Marcello DiMare - Belmont MA
Salvatore Anthony Marchese - Malden MA
Eric N. Jacobsen - Boston MA
Serge Jasmin - Watertown MA

Assignee:

Rhodia Chirex, Inc. - MA

International Classification:

C07D30132

US Classification:

549541, 549513, 549540

Abstract:

The present invention provides a process for the preparation of an enantiomerically enriched non-racemic chiral diol and an enantiomerically enriched non-racemic chiral epoxy compound by a hydrolytic kinetic resolution reaction. The process includes the step of contacting oxygen and mixture including a racemic chiral epoxy compound, a non-racemic Co(II) complex catalyst, an aromatic carboxylic acid and water, at a temperature and length of time sufficient to produce a mixture of said non-racemic chiral diol and said non-racemic chiral epoxy compound. The present invention also provides a process for the preparation of an enantiomerically enriched non-racemic chiral diol and an enantiomerically enriched non-racemic chiral epoxy compound by a hydrolytic kinetic resolution reaction. This process includes the step of: contacting a racemic chiral epoxy compound and water in the presence of a non-racemic complex of Co(III) having an aryl carboxylate counter-anion, at a temperature and length of time sufficient to produce a mixture of said non-racemic chiral diol and said non-racemic chiral epoxy compound.

US Patent:

7016788, Mar 21, 2006

Filed:

Jul 6, 2001

Appl. No.:

09/900621

Inventors:

Joel S. Bader - Stamford CT, US
Yi Liu - San Diego CA, US
Darius M. Dziuda - North Haven CT, US

Assignee:

CuraGen Corporation - Branford CT

International Classification:

G01N 33/48
G06F 19/00

US Classification:

702 19, 702 20

Abstract:

The present invention provides novel methods to identify, classify, quantify and compare nucleic acids and polypeptides.

US Patent:

7728135, Jun 1, 2010

Filed:

Jan 5, 2006

Appl. No.:

11/326154

Inventors:

Xiongwei Shi - Edison NJ, US
Man Zhu - Clark NJ, US
William Leong - Westfield NJ, US
Vilas Dahanukar - Hyderabad, IN
Ilia A. Zavialov - Princeton NJ, US
Cecelia Proietti - Clark NJ, US
Shannon Zhao - Littleton MA, US
Hong-Chang Lee - Livingston NJ, US
Yi Liu - Clark NJ, US
Hoa N. Nguyen - Dayton NJ, US
Wenxue Wu - Princeton Junction NJ, US
Bosco D'Sa - Edison NJ, US
Feng Liang - Monmouth Junction NJ, US
Loc Thanh Tran - Parsippany NJ, US

Assignee:

Schering Corporation - Kenilworth NJ

International Classification:

C07D 401/14
C07D 403/12
A61K 31/506
A61K 31/18

US Classification:

544295, 544364, 544335

Abstract:

The present invention is directed to the synthesis of 4-[4-[(R)-[1-[cyclopropylsulfonyl)-4-piperidinyl](3-fluorophenyl)methyl]-3(S)-methyl-1-piperazinyl]-1-[(4,6-dimethyl-5-pyrimidinyl)carbonyl]-4-methylpiperidine], and intermediates therefor from readily available starting materials by a novel route.

US Patent:

8338079, Dec 25, 2012

Filed:

Jun 28, 2010

Appl. No.:

12/825124

Inventors:

Young Cheol Bae - Weston MA, US
Thomas Cardolaccia - Newton MA, US
Yi Liu - Shrewsbury MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

G03F 7/00
G03F 7/004
G03F 7/40

US Classification:

4302711, 4302701, 4302731, 430322, 430319, 430330, 430331

Abstract:

Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.

US Patent:

8338083, Dec 25, 2012

Filed:

Jun 28, 2010

Appl. No.:

12/825157

Inventors:

Young Cheol Bae - Weston MA, US
Thomas Cardolaccia - Newton MA, US
Yi Liu - Wayland MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

G03F 7/00
G03F 7/004
G03F 7/40
G03F 7/20

US Classification:

430312, 4302701, 4302731, 430330, 430322, 430331, 430913

Abstract:

Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.