Yu U Fan

US Patent:

7381737, Jun 3, 2008

Filed:

Sep 29, 2005

Appl. No.:

11/238427

Inventors:

Albert J. DelMonte - Edison NJ, US
T. G. Murali Dhar - Newtown PA, US
Yu Fan - Highland Park NJ, US
Jack Z. Gougoutas - Princeton NJ, US
Mary F. Malley - Lawrenceville NJ, US
Douglas D. McLeod - Kingston NJ, US
Robert E. Waltermire - Hillsborough NJ, US
Chenkou Wei - Princeton Junction NJ, US

Assignee:

Bristol-Myers Squibb Company - Princeton NJ

International Classification:

A61K 31/4188
C07D 235/00

US Classification:

514389, 5483014

Abstract:

A process is provided for preparing spiro-hydantoin compounds of the formula II.

US Patent:

7692511, Apr 6, 2010

Filed:

Mar 21, 2008

Appl. No.:

12/077811

Inventors:

Yinon Degani - Highland Park NJ, US
Yu Fan - Dallas TX, US
Charley Chunlei Gao - Plano TX, US
Kunquan Sun - Plano TX, US
Liguo Sun - Plano TX, US
Jian Cheng - Anhui, CN

Assignee:

Sychip Inc. - Plano TX

International Classification:

H03H 7/42
H01P 3/08

US Classification:

333 25, 333238

Abstract:

Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

US Patent:

7795709, Sep 14, 2010

Filed:

Oct 30, 2007

Appl. No.:

11/980062

Inventors:

Yinon Degani - Highland Park NJ, US
Yu Fan - Dallas TX, US
Charley Chunlei Gao - Plano TX, US
Kunguan Sun - Plano TX, US
Liguo Sun - Plano TX, US

Assignee:

Sychip Inc. - Plano TX

International Classification:

H01L 23/552

US Classification:

257659, 257758, 257750, 257E29, 257508, 438118

Abstract:

The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shield plates. The shield plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

US Patent:

7936043, May 3, 2011

Filed:

Mar 17, 2006

Appl. No.:

11/378106

Inventors:

Yinon Degani - Highland Park NJ, US
Yu Fan - Dallas TX, US
Charley Chunlei Gao - Plano TX, US
Maureen Lau - Warren NJ, US
Kunquan Sun - Plano TX, US
Liguo Sun - Plano TX, US

Assignee:

Sychip Inc. - Plano TX

International Classification:

H01L 29/00

US Classification:

257528, 257532

Abstract:

The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

US Patent:

20060217102, Sep 28, 2006

Filed:

Mar 22, 2005

Appl. No.:

11/085977

Inventors:

Yinon Degani - Highland Park NJ, US
Yu Fan - Dallas TX, US
Charley Gao - Plano TX, US
Kunquan Sun - Plano TX, US
Liguo Sun - Plano TX, US
King Tai - Berkeley Heights NJ, US

International Classification:

H04B 1/28

US Classification:

455333000, 455078000

Abstract:

The specification describes an integrated passive device (IPD) designed to allow implementation of cellular RF and Wi-Fi RF in a single hand held device. To address the problem of RF interference a thin film RF high rejection bandpass filter is formed in an IPD implementation. The IPD implementation preferably uses silicon as the substrate material. This allows the thin film RF high rejection bandpass filter to be made using silicon processing technology, and thus produce low cost filters that still meet stringent performance requirements demanded due to the co-existing RF units. In preferred embodiments of the invention, wafer level processing using silicon substrates adds to the cost effective manufacture of the highly functional IPDs.

US Patent:

20060255434, Nov 16, 2006

Filed:

May 12, 2005

Appl. No.:

11/127889

Inventors:

Yinon Degani - Highland Park NJ, US
Yu Fan - Dallas TX, US
Charley Gao - Plano TX, US
Kunguan Sun - Plano TX, US
Liguo Sun - Plano TX, US

International Classification:

H01L 23/552

US Classification:

257659000

Abstract:

The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shielding plates. The shielding plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

US Patent:

20080061420, Mar 13, 2008

Filed:

Sep 13, 2006

Appl. No.:

11/520254

Inventors:

Yinon Degani - Highland Park NJ, US
Yinchao Chen - Columbia SC, US
Yu Fan - Dallas TX, US
Charley Chunlei Gao - Plano TX, US
Kunquan Sun - Plano TX, US
Liquo Sun - Plano TX, US

International Classification:

H01L 23/02
H01L 21/00

US Classification:

257686, 438109, 257E23085

Abstract:

The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

US Patent:

20080269499, Oct 30, 2008

Filed:

May 30, 2008

Appl. No.:

12/130915

Inventors:

Albert J. DelMonte - Edison NJ, US
Yu Fan - Highland Park NJ, US
Jack Z. Gougoutas - Princeton NJ, US
Mary F. Malley - Lawrenceville NJ, US
Douglas D. McLeod - Kingston NJ, US
Robert E. Waltermire - Hillsborough NJ, US
Chenkou Wei - Princeton Junction NJ, US

Assignee:

BRISTOL-MYERS SQUIBB COMPANY - Princeton NJ

International Classification:

C07D 487/10

US Classification:

5483014

Abstract:

A process is provided for preparing spiro-hydantoin compounds of the formula IIwherein Z is N or CR; K and L are independently O or S; Ar is an optionally substituted aryl or heteroaryl; Ais a linker, G′ is a linker; Q is a linker; and R, R, R, and Rare defined in the specification. The process optionally includes the enantiomeric separation of intermediates to allow preparation of enantiomers of the spiro-hydantoin compounds of formula II. Substituted spiro-hydantoin compounds may be prepared from the spiro-hydantoin compounds of formula II. The spiro-hydantoin compound of formula II and the substituted spiro-hydantoin compounds are useful in the treatment of immune or inflammatory diseases. Also, provided are products made by the instant inventive process and crystalline forms (prepared by any process) of the substituted spiro-hydantoin compound, 5-[(5S,9R)-9-(4-Cyanophenyl)-3-(3,5-dichlorophenyl)-1-methyl-2,4-dioxo-1,3,7-triazaspiro[4.4]non-7-ylmethyl]-thiophene-3-carboxylic acid, including solvates and salts thereof, as well as methods of use thereof. Crystalline forms of certain intermediates are provided.