David W. Abraham - Croton NY, US Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 19/02
US Classification:
365158, 365 55, 365157
Abstract:
A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from the first application. The method further includes selecting a second application as a destination for the data selected. The method further includes selecting a location in the second application for inserting the data selected.
Snorri T. Ingvarsson - Reykjavik, IS Rainer E. R. Leuschner - Mohegan Lake NY, US Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY Infineon Technologies North America Corporation - San Jose CA
International Classification:
H01L 29/82
US Classification:
257422, 257421
Abstract:
A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The magnetic liner is preferably a super-paramagnet with high susceptibility or a ferromagnet with a microstructure where the size of the non-exchanged coupled micro domains is so small that their energy content is close to or small compared to kT that such films have super-paramagnetic properties and essentially behave like a paramagnet with high susceptibility.
Metallic Nanostructures Adapted For Electromagnetic Field Enhancement
Luke P. Lee - Orinda CA, US Yu Lu - Riverside CA, US Gang L. Liu - Berkeley CA, US Jaeyoun Kim - Ames IA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
G01J 3/44
US Classification:
356301
Abstract:
The disclosure relates to metallic nanophotonic crescent structures, or “nanocrescent SERS probes,” that enhance detectable signals to facilitate molecular detections. More particularly, the nanocrescent SERS probes of the disclosure possess specialized geometries, including an edge surrounding the opening that is capable of enhancing local electromagnetic fields. Nanosystems utilizing such structures are particularly useful in the medical field for detecting rare molecular targets, biomolecular cellular imaging, and in molecular medicine.
William J. Gallagher - Ardsley NY, US Yu Lu - Ridgefield CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 19/00
US Classification:
365 81, 365148, 365158, 365173, 977933
Abstract:
In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.
Snorri Ingvarsson - Reykjavik, IS Rainer Leuschner - Mohegan Lake NY, US Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY Infineon Technologies North America Corp. - San Jose CA
International Classification:
H01L 21/00
US Classification:
438003000, 257E21001
Abstract:
A method of making a conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The magnetic liner is preferably a super-paramagnet with high susceptibility or a ferromagnet with a microstructure where the size of the non-exchanged coupled micro domains is so small that their energy content is close to or small compared to kT that such films have super-paramagnetic properties and essentially behave like a paramagnet with high susceptibility.
Multi-Bit Spin-Momentum-Transfer Magnetoresistence Random Access Memory With Single Magnetic-Tunnel-Junction Stack
Guohan Hu - Yorktown Heights NY, US Yu Lu - Hopewell Junction NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
G11C 11/16
US Classification:
365158
Abstract:
A magneto resistive random access memory system includes a first magnetic-tunnel-junction device coupled to a first bit-line, a second magnetic-tunnel-junction device coupled to a second bit-line, a selection transistor coupled to the first and second bit-lines and a word-line coupled to the selection transistor.
Qing Cao - Yorktown Heights NY, US Dechao Guo - Fishkill NY, US Shu-Jen Han - Cortlandt Manor NY, US Yu Lu - Hopewell Junction NY, US Keith Kwong Hon Wong - Wappingers Falls NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.
Qing Cao - Yorktown Heights NY, US Dechao Guo - Fishkill NY, US Shu-Jen Han - Cortlandt Manor NY, US Yu Lu - Hopewell Junction NY, US Keith Kwong Hon Wong - Wappingers Falls NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/336 B82Y 40/00
US Classification:
438151, 977742, 257E21411
Abstract:
A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.
Name / Title
Company / Classification
Phones & Addresses
Yu Shu Lu President
EUBIZ, INC Manufacturer of Communication Equipment Components · Telephone Apparatus Manufacturing
783 Mary Caroline Dr, San Jose, CA 95133 4089297526
Yu Hong Lu
H2 GALAXY CORP Nonclassifiable Establishments · Ret Sporting Goods/Bicycles
4134 Frame Pl, Flushing, NY 11355 4327 Bowne St, Flushing, NY 11355 20417 45 Dr, Flushing, NY 11361 7187622841
Yu Ya Lu
LU WOODSIDE MINI MALL INC Nonclassifiable Establishments · Nonresidential Building Operator
60-19 Roosevelt Ave, Woodside, NY 11377 6019 Roosevelt Ave, Flushing, NY 11377
Yu Feng Lu
FAN SHUN KITCHEN INC
63-59 108 St, Forest Hills, NY 11375 3-59 108 St, Forest Hills, NY 11375
Yu Lu President
USA CALIFORNIA WOLE INT'L GROUP INC
Yu Lu President
YAMA CORPORATION Business Services at Non-Commercial Site