Yuan J Xu from Rancho Palos Verdes, CA, age 88

Isbn (Books And Publications)

Orthogonal Polynomials of Several Variables

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Author
Yuan Xu

ISBN #
0521800439

Resumes

Sales Manager

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Industry:

Financial Services

Work:

Homecredit
Sales Manager

Education:

University 2010 - 2015
Bachelors, Finance

Skills:

Leadership
Microsoft Office
Microsoft Word
Powerpoint
Research
Microsoft Excel
Social Media
Marketing
Public Speaking
Customer Service

Yuan Xu

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Skills:

San
Biologics

Yuan Cheng Xu

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Yuan Xu Dallas, TX

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Work:

Alliance Sports Group

Jun 2014 to 2000
Staff accountant ZHENGHUI Accounting Firm
Weihai, CN
Jun 2012 to Jul 2012
Intern Accountant DISHANG KENNY
Weihai, CN
Nov 2011 to Dec 2011
Part time worker

Education:

The University of Texas at Dallas
Dallas, TX
May 2014
Master of Science in Accounting Shanghai University
2012
Bachelor of Business

Skills:

CPA candidate, GP

Name / Title

Company / Classification

Phones & Addresses

Yuan Xu
President

MODERN ADVERTISING CORP

310 S California STE D, San Gabriel, CA 91776

Us Patents

P Channel Radhard Device With Boron Diffused P-Type Polysilicon Gate
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US Patent:

7569901, Aug 4, 2009
Filed:

Oct 18, 2000
Appl. No.:

09/691083
Inventors:

Yuan Xu - El Segundo CA, US
Assignee:

International Rectifier Corporation - El Segundo CA
International Classification:

H01L 21/336
US Classification:

257402, 257E21625
Abstract:

A MOS gated device is resistant to both high radiation and SEE environments. Spaced, N-type body regions are formed in the surface of a P-type substrate of a semiconductor wafer. P-type dopants are introduced into the surface within each of the channel regions to form respective source regions therein. The periphery of each of the source regions is spaced from the periphery of its respective channel region at the surface to define N-type channel regions between the spaced peripheries. A layer of gate oxide is formed over the channel areas. A doped polysilicon gate electrode is formed atop the gate oxide. A source electrode is formed atop the source regions. The MOS gated device is optimized to maintain a threshold voltage of between −2V to −5V for a total irradiation dose of 300 Krad while maintaining SEE withstand capability.

P Channel Radhard Device With Boron Diffused P-Type Polysilicon Gate
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US Patent:

61658219, Dec 26, 2000
Filed:

Feb 9, 1998
Appl. No.:

9/020837
Inventors:

Milton J. Boden - Redondo Beach CA
Yuan Xu - El Segundo CA
Assignee:

International Rectifier Corp. - El Segundo CA
International Classification:

H01L 21332
US Classification:

438137
Abstract:

A MOS gated device is resistant to both high radiation and SEE environments. Spaced, N-type body regions are formed in the surface of a P-type substrate of a semiconductor wafer. P-type dopants are introduced into the surface within each of the channel regions to form respective source regions therein. The periphery of each of the source regions is spaced from the periphery of its respective channel region at the surface to define N-type channel regions between the spaced peripheries. A layer of gate oxide is formed over the channel areas. A doped polysilicon gate electrode is formed atop the gate oxide. A source electrode is formed atop the source regions. The MOS gated device is optimized to maintain a threshold voltage of between -2V to -5V for a total irradiation dose of 300 Krad while maintaining SEE withstand capability.