Zheng Gao

US Patent:

7936598, May 3, 2011

Filed:

Apr 28, 2009

Appl. No.:

12/431162

Inventors:

Yuankai Zheng - Bloomington MN, US
Zheng Gao - San Jose CA, US
Wonjoon Jung - Bloomington MN, US
Xuebing Feng - Chanhassen MN, US
Xiaohua Lou - Bloomington MN, US
Haiwen Xi - Prior Lake MN, US

Assignee:

Seagate Technology - Scotts Valley CA

International Classification:

G11C 11/15

US Classification:

365173, 365171

Abstract:

A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

US Patent:

7999338, Aug 16, 2011

Filed:

Jul 13, 2009

Appl. No.:

12/502209

Inventors:

Yuankai Zheng - Bloomington MN, US
Zheng Gao - San Jose CA, US
Wenzhong Zhu - Apple Valley MN, US
Wonjoon Jung - Bloomington MN, US
Haiwen Xi - Prior Lake MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 29/82
G11C 11/02

US Classification:

257421, 257414, 257E29323, 438 3, 3603242, 365157, 365171

Abstract:

A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

US Patent:

8035177, Oct 11, 2011

Filed:

Apr 17, 2009

Appl. No.:

12/425466

Inventors:

Xiaohua Lou - Bloomington MN, US
Yuankai Zheng - Bloomington MN, US
Wenzhong Zhu - Apple Valley MN, US
Wei Tian - Bloomington MN, US
Zheng Gao - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 29/82
G11C 11/02

US Classification:

257421, 257422, 257423, 257424, 257E29323, 438 3, 365157, 365158, 3603242

Abstract:

A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

US Patent:

8039913, Oct 18, 2011

Filed:

Apr 17, 2009

Appl. No.:

12/425451

Inventors:

Yuankai Zheng - Bloomington MN, US
Zheng Gao - San Jose CA, US
Xuebing Feng - Chanhassen MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 29/82

US Classification:

257421, 257422, 257E29001, 257E29323

Abstract:

A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.

US Patent:

8111505, Feb 7, 2012

Filed:

Oct 16, 2009

Appl. No.:

12/580922

Inventors:

John Raff - Menlo Park CA, US
Bartley K. Andre - Menlo Park CA, US
Laura DeForest - Sunnyvale CA, US
John C. DiFonzo - Emerald Hills CA, US
Zheng Gao - San Jose CA, US
Michelle Goldberg - Sunnyvale CA, US
Bradley J. Hamel - Sunnyvale CA, US
Timothy S. Hibbard - Menlo Park CA, US
Ron Hopkinson - Campbell CA, US
William F. Leggett - San Francisco CA, US
Chris Ligtenberg - San Carlos CA, US
Gavin J. Reid - Campbell CA, US
Charles A. Schwalbach - Menlo Park CA, US

Assignee:

Apple Inc. - Cupertino CA

International Classification:

G06F 1/16

US Classification:

36167902, 36167955

Abstract:

A multipart computer housing is described. The multipart computer housing includes at least a structural support layer and a body. The body includes at least an outer layer formed of lightweight flexible material and an inner layer attached to the outer layer. The inner layer is connected to the support layer forming a load path between the inner layer and the structural support layer. A load applied to the multipart computer housing is transferred by way of the load path to the support layer without substantially affecting the outer layer.

US Patent:

8199468, Jun 12, 2012

Filed:

Oct 16, 2009

Appl. No.:

12/580927

Inventors:

John Raff - Menlo Park CA, US
Bartley K. Andre - Menlo Park CA, US
Laura DeForest - Sunnyvale CA, US
John C. DiFonzo - Emerald Hills CA, US
Zheng Gao - San Jose CA, US
Michelle Goldberg - Sunnyvale CA, US
Bradley J. Hamel - Sunnyvale CA, US
Timothy S. Hibbard - Menlo Park CA, US
Ron Hopkinson - Campbell CA, US
William F. Leggett - San Francisco CA, US
Chris Ligtenberg - San Carlos CA, US
Gavin J. Reid - Campbell CA, US
Charles A. Schwalbach - Menlo Park CA, US

Assignee:

Apple Inc. - Cupertino CA

International Classification:

G06F 1/16

US Classification:

36167902

Abstract:

A multipart computer housing is described. The multipart computer housing includes at least a clutch barrel. The clutch barrel encloses a connector assembly, the connector assembly providing support for a lid. The clutch barrel is configured such that a junction formed by the clutch barrel and a top layer of the lid is not visible to a user when the computer housing is on a horizontal surface.

US Patent:

8217478, Jul 10, 2012

Filed:

Apr 17, 2009

Appl. No.:

12/425466

Inventors:

Xiaohua Lou - Bloomington MN, US
Yuankai Zheng - Bloomington MN, US
Wenzhong Zhu - Apple Valley MN, US
Wei Tian - Bloomington MN, US
Zheng Gao - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 29/82
G11C 11/02

US Classification:

257421, 257422, 257423, 257424, 257E29323, 438 3, 365157, 365158, 3603242

Abstract:

A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

US Patent:

8279662, Oct 2, 2012

Filed:

Nov 11, 2010

Appl. No.:

12/944523

Inventors:

Xiaohua Lou - Milpitas CA, US
Zheng Gao - San Jose CA, US
Dimitar V. Dimitrov - Edina MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11C 11/00

US Classification:

365158, 365148, 365171, 977935

Abstract:

An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a magnetic tunnel junction (MTJ) has a ferromagnetic free layer with multiple magnetic domains that are each independently programmable to predetermined magnetizations. Those magnetizations can then be read as different logical states of the MTJ.