Bin Lu

US Patent:

7044836, May 16, 2006

Filed:

Apr 21, 2003

Appl. No.:

10/419580

Inventors:

Fred F. Sun - Naperville IL, US
Bin Lu - Naperville IL, US
Ethan K. Lightle - Lostant IL, US
Shumin Wang - Naperville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 1/00

US Classification:

451 41, 451 60, 451287, 451288, 451446, 51307, 51308, 51309

Abstract:

The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

US Patent:

7955519, Jun 7, 2011

Filed:

Sep 30, 2005

Appl. No.:

11/241137

Inventors:

Yuchun Wang - Naperville IL, US
Jason Aggio - Bolingbrook IL, US
Bin Lu - Naperville IL, US
John Parker - Naperville IL, US
Renjie Zhou - Aurora IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 13/00

US Classification:

252 791, 252 792, 252 793, 252 794, 438672, 438689, 438693

Abstract:

The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0. 01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises α-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0. 1 to about 4. 8, and water.

US Patent:

20060096179, May 11, 2006

Filed:

Nov 5, 2004

Appl. No.:

10/982080

Inventors:

Bin Lu - Naperville IL, US
Li Wu - Naperville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 3/14

US Classification:

051307000

Abstract:

The invention provides a polishing composition comprising (a) particles of an abrasive comprising a first metal oxide and a second metal oxide adhered to at least a portion of a surface of the first metal oxide, (b) a water-soluble or water-emulsifiable polymer, wherein the water-soluble or water-emulsifiable polymer coats at least a portion of the second metal oxide such that the zeta potential of the abrasive is changed, and (c) water. The invention further provides a method of chemically-mechanically polishing a substrate through use of such a polishing composition.

US Patent:

20070068901, Mar 29, 2007

Filed:

Sep 29, 2005

Appl. No.:

11/238236

Inventors:

Wang Yuchun - Naperville IL, US
Bin Lu - Naperville IL, US
John Parker - Naperville IL, US
Roger Martin - Aurora IL, US

International Classification:

C09K 13/00
C03C 15/00
H01L 21/302

US Classification:

216088000, 252079100, 438692000

Abstract:

A composition suitable for copper chemical-mechanical polishing (CMP) comprises an abrasive powder, such as a silica and/or alumina abrasive, in a liquid carrier. The composition has a transition metal content of less than about 5 parts per million (ppm), preferably less than about 2 ppm. Preferably the composition contains less than about 2 ppm of yttrium, zirconium, and/or iron. The CMP compositions, when combined with hydrogen peroxide, provide CMP slurries for copper CMP that have improved pot life by ameliorating hydrogen peroxide degradation in slurries.

US Patent:

20080132071, Jun 5, 2008

Filed:

Jan 25, 2008

Appl. No.:

12/011435

Inventors:

Wang Yuchun - Naperville IL, US
Bin Lu - Naperville IL, US
John Parker - Naperville IL, US
Roger Martin - Aurora IL, US

International Classification:

H01L 21/461

US Classification:

438692, 257E21483

Abstract:

A method for providing CMP slurries for copper CMP that have improved pot life by ameliorating hydrogen peroxide degradation in slurries. The method comprises a composition that has a transition metal content of less than about 5 parts per million (ppm), preferably less than about 2 ppm. Preferably the method comprises a composition containing less than about 2 ppm of yttrium, zirconium, and/or iron.

Address:

11S080 West St, Naperville, IL 60565

Phone:

6304160845

VIN:

1HGCP2F85AA073069

Make:

HONDA

Model:

ACCORD

Year:

2010