Jinyuan Chen

US Patent:

8608851, Dec 17, 2013

Filed:

Oct 10, 2006

Appl. No.:

11/546041

Inventors:

Tom Ni - Pleasanton CA, US
Jinyuan Chen - Union City CA, US
Qing Qian - San Jose CA, US
Yuehong Fu - Fremont CA, US
Zhaoyang Xu - Shanghai, CN
Xusheng Zhou - Shanghai, CN
Ye Wang - Shanghai, CN

Assignee:

Advanced Micro-Fabrication Equipment, Inc. Asia - George Town, Grand Cayman

International Classification:

C23C 16/00

US Classification:

118715, 118723 E, 15634529, 15634547, 31511171

Abstract:

A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

US Patent:

20120075033, Mar 29, 2012

Filed:

Sep 21, 2011

Appl. No.:

13/239316

Inventors:

Liang OUYANG - Shanghai, CN
Lei Liu - Anhui, CN
Xueming Qian - Shanghai, CN
Jinyuan Chen - Union City CA, US

International Classification:

H03H 7/38
H01R 43/00

US Classification:

333 32, 29825

Abstract:

A single matching network is adapted to input at least two frequencies, which is used to selectively provide an RF power match at any one of the at least two frequencies to a plasma load, and the single matching network includes an input terminal connected to a multi-frequency input and an output terminal connected to the plasma load. A capacitor and an inductor connected in series with each other are provided between the input terminal and the output terminal to form a branch, the capacitance value of the capacitor is C, and the inductance value of the inductor is L, wherein, the capacitance value Cand the inductance value Lsatisfy the following relations:wherein, ω=2πf1, ω=2πf2, the f1 and f2 are respectively the two frequencies, y1 is the impedance required for the branch when achieving a matching state at frequency f1, and y2 is the impedance required for the branch when achieving a matching state at frequency f2.

US Patent:

20130048216, Feb 28, 2013

Filed:

Oct 29, 2012

Appl. No.:

13/663408

Inventors:

Advanced micro-fabrication equipment, Inc. Asia - Georgetown, KY
Jinyuan Chen - Union City CA, US
Tuqiang Ni - Pleasanton CA, US

Assignee:

ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA - Georgetown

International Classification:

C23C 16/509
B44C 1/22
H05H 1/24

US Classification:

15634533, 118723 E

Abstract:

A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

US Patent:

20140103805, Apr 17, 2014

Filed:

Dec 16, 2013

Appl. No.:

14/108241

Inventors:

- George Town, KY
Jinyuan Chen - Union City CA, US
Qing Qian - San Jose CA, US
Yuehong Fu - Fremont CA, US
Zhaoyang Xu - Shanghai, CN
Xusheng Zhou - Shanghai, CN
Ye Wang - Shanghai, CN

Assignee:

ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA - George Town

International Classification:

H05H 1/03

US Classification:

315 85

Abstract:

A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.