Xiao Yi Luo

US Patent:

7379327, May 27, 2008

Filed:

Jun 26, 2006

Appl. No.:

11/476171

Inventors:

Eugene Youjun Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Alex Fischer Panchula - San Carlos CA, US
Lien-Chang Wang - Fremont CA, US
Xiao Luo - Cupertino CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 11/00

US Classification:

365158, 365171, 365173

Abstract:

A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

Address:

223 Miramar Ave, San Francisco, CA 94112

VIN:

4JGBB5GB2AA575117

Make:

MERCEDES-BENZ

Model:

M-CLASS

Year:

2010