Xiao Qian Luo

US Patent:

7345912, Mar 18, 2008

Filed:

Jun 1, 2006

Appl. No.:

11/446391

Inventors:

Xiao Luo - Cupertino CA, US
Eugene Youjun Chen - Fremont CA, US
Lien-Chang Wang - Fremont CA, US
Yiming Huai - Pleasanton CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 11/00

US Classification:

365158, 365157

Abstract:

A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

US Patent:

7379327, May 27, 2008

Filed:

Jun 26, 2006

Appl. No.:

11/476171

Inventors:

Eugene Youjun Chen - Fremont CA, US
Yiming Huai - Pleasanton CA, US
Alex Fischer Panchula - San Carlos CA, US
Lien-Chang Wang - Fremont CA, US
Xiao Luo - Cupertino CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 11/00

US Classification:

365158, 365171, 365173

Abstract:

A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

US Patent:

7486572, Feb 3, 2009

Filed:

Jun 14, 2006

Appl. No.:

11/452439

Inventors:

Xiao Luo - San Jose CA, US
Tsung-Lu Syu - San Jose CA, US

Assignee:

Brilliance Semiconductor Intl. Inc. - Tortola

International Classification:

G11C 5/14

US Classification:

36518909, 3651852, 365229, 3652101, 36521012, 36518518, 315287, 323276

Abstract:

A voltage regulator for a static random access memory operating either in a standby mode or a operation mode is provided. The voltage regulator includes a reference voltage generating circuit for generating a reference voltage, a first control circuit connected to the reference voltage generating circuit for providing power supply during the standby mode of the SRAM, and a second control circuit connected to the reference voltage generating circuit for providing power in response to an enabling signal during the operation mode of the SRAM.

US Patent:

7623369, Nov 24, 2009

Filed:

Feb 13, 2008

Appl. No.:

12/030541

Inventors:

Xiao Luo - Cupertino CA, US
Eugene Chen - Fremont CA, US
Lien-Chang Wang - Fremont CA, US
Yiming Huai - Pleasanton CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 16/04

US Classification:

365158, 365173

Abstract:

A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

US Patent:

7676131, Mar 9, 2010

Filed:

Jun 4, 2004

Appl. No.:

10/862003

Inventors:

Xiao Bing Luo - San Jose CA, US

Assignee:

POA Sana Liquidating Trust - Mountain View CA

International Classification:

G02B 6/10
G02B 6/32
G02F 1/13335

US Classification:

385129, 385901, 385 33, 349 61, 349 62

Abstract:

Optical transmission structures include a waveguide and an optical lens wherein the optical lens has a sufficiently large thickness to allow the formation of a curved front lens surface that collimates transmitted light rays so that they travel within a plane that is coplanar to a working surface. The present invention also relates to a technique for manufacturing the optical transmission structure, which involves the use of a photopolymer material. The optical transmission structure can be implemented in various systems such as a system for optical data input.

US Patent:

7764536, Jul 27, 2010

Filed:

Aug 7, 2007

Appl. No.:

11/834917

Inventors:

Xiao Luo - Cupertino CA, US
David Chang-Cheng Yu - Pleasanton CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 11/00

US Classification:

365158, 365157, 365148, 365171, 365173, 365 97

Abstract:

A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disables at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.

US Patent:

7894248, Feb 22, 2011

Filed:

Sep 12, 2008

Appl. No.:

12/210126

Inventors:

David Chang-Cheng Yu - Pleasanton CA, US
Xiao Luo - Cupertino CA, US

Assignee:

Grandis Inc. - Milpitas CA

International Classification:

G11C 11/00
G11C 17/00
G11C 17/02
G11C 11/14
G11C 17/18

US Classification:

365158, 365 96, 365 97, 365171, 3652257

Abstract:

Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.

US Patent:

20070279967, Dec 6, 2007

Filed:

May 18, 2006

Appl. No.:

11/436446

Inventors:

Xiao Luo - Cupertino CA, US
Lien-Chang Wang - Fremont CA, US

International Classification:

H01L 29/76
H01L 29/94
G11C 11/00
G11C 11/14
H01L 31/00

US Classification:

365158, 365171, 257401

Abstract:

A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.

Address:

223 Miramar Ave, San Francisco, CA 94112

VIN:

4JGBB5GB2AA575117

Make:

MERCEDES-BENZ

Model:

M-CLASS

Year:

2010